Digital Output Ground Voltage (OGND) ........ –0.3V to 1V
Analog Input Voltage (Note 3) .......–0.3V to (V
DD
+ 0.3V)
Digital Input Voltage......................–0.3V to (V
DD
+ 0.3V)
Digital Output Voltage ................ –0.3V to (OV
DD
+ 0.3V)
Power Dissipation .............................................1500mW
Operating Temperature Range
LTC2285C ................................................ 0°C to 70°C
LTC2285I.............................................. –40°C to 85°C
Storage Temperature Range................... –65°C to 150°C
ORDER INFORMATION
LEAD FREE FINISH
LTC2285CUP#PBF
LTC2285IUP#PBF
LEAD BASED FINISH
LTC2285CUP
LTC2285IUP
TAPE AND REEL
LTC2285CUP#TRPBF
LTC2285IUP#TRPBF
TAPE AND REEL
LTC2285CUP#TR
LTC2285IUP#TR
PART MARKING*
LTC2285UP
LTC2285UP
PART MARKING*
LTC2285UP
LTC2285UP
PACKAGE DESCRIPTION
64-Lead (9mm × 9mm) Plastic QFN
64-Lead (9mm × 9mm) Plastic QFN
PACKAGE DESCRIPTION
64-Lead (9mm × 9mm) Plastic QFN
64-Lead (9mm × 9mm) Plastic QFN
TEMPERATURE RANGE
0°C to 70°C
–40°C to 85°C
TEMPERATURE RANGE
0°C to 70°C
–40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/
temperature range, otherwise specifications are at T
A
= 25°C. (Note 4)
PARAMETER
Resolution (No Missing Codes)
Integral Linearity Error
Differential Linearity Error
Offset Error
Gain Error
Offset Drift
Full-Scale Drift
Internal Reference
External Reference
CONDITIONS
CONVERTER CHARACTERISTICS
The
l
denotes the specifications which apply over the full operating
MIN
●
GND 17
V
DD
18
SENSEB 19
VCMB 20
MUX 21
SHDNB 22
OEB
23
DB0 24
DB1 25
DB2 26
DB3 27
DB4 28
DB5 29
DB6 30
OGND 31
OV
DD
32
TYP
±1.5
MAX
UNITS
Bits
LSB
14
–1
–12
–2.5
±0.6
±2
±0.5
±10
±30
±5
1.1
12
2.5
Differential Analog Input (Note 5)
Differential Analog Input
(Note 6)
External Reference
●
●
●
●
LSB
mV
%FS
μV/°C
ppm/°C
ppm/°C
2285fb
2
LTC2285
CONVERTER CHARACTERISTICS
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. (Note 4)
CONDITIONS
External Reference
SENSE = 1V
PARAMETER
Gain Matching
Offset Matching
Transition Noise
MIN
TYP
±0.3
±2
1.3
MAX
UNITS
%FS
mV
LSB
RMS
ANALOG INPUT
SYMBOL
V
IN
V
IN,CM
I
IN
I
SENSE
I
MODE
t
AP
t
JITTER
CMRR
PARAMETER
The
l
denotes the specifications which apply over the full operating temperature range, otherwise
specifications are at T
A
= 25°C. (Note 4)
CONDITIONS
2.85V < V
DD
< 3.4V (Note 7)
Differential Input Drive (Note 7)
Single Ended Input Drive (Note 7)
0V < A
IN+
, A
IN–
< V
DD
0V < SENSEA, SENSEB < 1V
0V < MODE < V
DD
●
●
●
●
●
●
MIN
1
0.5
–1
–3
–3
TYP
±0.5V to ±1V
1.5
1.5
MAX
1.9
2
1
3
3
UNITS
V
V
V
μA
μA
μA
ns
ps
RMS
dB
MHz
Analog Input Range (A
IN+
–A
IN–
)
Analog Input Common Mode (A
IN+
+A
IN–
)/2
Analog Input Leakage Current
SENSEA, SENSEB Input Leakage
MODE Input Leakage Current
Sample-and-Hold Acquisition Delay Time
Sample-and-Hold Acquisition Delay Time Jitter
Analog Input Common Mode Rejection Ratio
Full Power Bandwidth
0
0.2
80
Figure 8 Test Circuit
640
DYNAMIC ACCURACY
SYMBOL
SNR
PARAMETER
Signal-to-Noise Ratio
The
l
denotes the specifications which apply over the full operating temperature range,
otherwise specifications are at T
A
= 25°C. A
IN
= –1dBFS. (Note 4)
CONDITIONS
5MHz Input
30MHz Input
70MHz Input
140MHz Input
SFDR
Spurious Free Dynamic Range
2nd or 3rd Harmonic
5MHz Input
30MHz Input
70MHz Input
140MHz Input
SFDR
Spurious Free Dynamic Range
4th Harmonic or Higher
5MHz Input
30MHz Input
70MHz Input
140MHz Input
S/(N+D)
Signal-to-Noise Plus Distortion Ratio
5MHz Input
30MHz Input
70MHz Input
140MHz Input
I
MD
Intermodulation Distortion
Crosstalk
f
IN
= 40MHz, 41MHz
f
IN
= 100MHz
●
●
●
●
MIN
TYP
72.4
72.3
MAX
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
68.9
72.2
71.7
88
85
70
82
78
90
90
77
90
90
72.2
72
67
71.9
70.2
85
–110
2285fb
3
LTC2285
INTERNAL REFERENCE CHARACTERISTICS
PARAMETER
V
CM
Output Voltage
V
CM
Output Tempco
V
CM
Line Regulation
V
CM
Output Resistance
2.85V < V
DD
< 3.4V
CONDITIONS
I
OUT
= 0
(Note 4)
MIN
1.475
TYP
1.500
±25
3
4
MAX
1.525
UNITS
V
ppm/°C
mV/V
Ω
|
I
OUT
|
< 1mA
DIGITAL INPUTS AND DIGITAL OUTPUTS
SYMBOL
V
IH
V
IL
I
IN
C
IN
LOGIC OUTPUTS
OV
DD
= 3V
C
OZ
I
SOURCE
I
SINK
V
OH
V
OL
OV
DD
= 2.5V
V
OH
V
OL
OV
DD
= 1.8V
V
OH
V
OL
High Level Output Voltage
Low Level Output Voltage
I
O
= –200μA
I
O
= 1.6mA
High Level Output Voltage
Low Level Output Voltage
I
O
= –200μA
I
O
= 1.6mA
Hi-Z Output Capacitance
Output Source Current
Output Sink Current
High Level Output Voltage
Low Level Output Voltage
OE
= High (Note 7)
V
OUT
= 0V
V
OUT
= 3V
I
O
= –10μA
I
O
= –200μA
I
O
= 10μA
I
O
= 1.6mA
PARAMETER
High Level Input Voltage
Low Level Input Voltage
Input Current
Input Capacitance
CONDITIONS
V
DD
= 3V
V
DD
= 3V
V
IN
= 0V to V
DD
(Note 7)
LOGIC INPUTS (CLK,
OE,
SHDN, MUX)
The
l
denotes the specifications which apply over the
full operating temperature range, otherwise specifications are at T
A
= 25°C. (Note 4)
MIN
●
●
●
TYP
MAX
UNITS
V
2
0.8
–10
3
10
V
μA
pF
3
50
50
●
●
pF
mA
mA
V
V
0.4
V
V
V
V
V
V
2.7
2.995
2.99
0.005
0.09
2.49
0.09
1.79
0.09
2285fb
4
LTC2285
The
l
denotes the specifications which apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C. (Note 8)
SYMBOL
V
DD
OV
DD
IV
DD
P
DISS
P
SHDN
P
NAP
PARAMETER
Analog Supply Voltage
Output Supply Voltage
Supply Current
Power Dissipation
Shutdown Power (Each Channel)
Nap Mode Power (Each Channel)
CONDITIONS
(Note 9)
(Note 9)
Both ADCs at f
S(MAX)
Both ADCs at f
S(MAX)
SHDN = H,
OE
= H, No CLK
SHDN = H,
OE
= L, No CLK
●
●
●
●
POWER REQUIREMENTS
MIN
2.85
0.5
TYP
3
3
263
790
2
15
MAX
3.4
3.6
305
915
UNITS
V
V
mA
mW
mW
mW
TIMING CHARACTERISTICS
SYMBOL
f
s
t
L
t
H
t
AP
t
D
t
C
t
MD
PARAMETER
Sampling Frequency
CLK Low Time
CLK High Time
Sample-and-Hold Aperture Delay
CLK to DATA Delay
CLK to CLKOUT Delay
DATA to CLKOUT Skew
MUX to DATA Delay
Data Access Time After
OE↓
BUS Relinquish Time
Pipeline Latency
The
l
denotes the specifications which apply over the full operating temperature
range, otherwise specifications are at T
A
= 25°C. (Note 4)
CONDITIONS
(Note 9)
Duty Cycle Stabilizer Off (Note 7)
Duty Cycle Stabilizer On (Note 7)
Duty Cycle Stabilizer Off (Note 7)
Duty Cycle Stabilizer On (Note 7)
C
L
= 5pF (Note 7)
C
L
= 5pF (Note 7)
(t
D
– t
C
) (Note 7)
C
L
= 5pF (Note 7)
C
L
= 5pF (Note 7)
(Note 7)
●
●
●
●
●
●
●
●
●
●
●
MIN
1
3.8
3
3.8
3
1.4
1.4
–0.6
1.4
TYP
4
4
4
4
0
2.7
2.7
0
2.7
4.3
3.3
5
MAX
125
500
500
500
500
5.4
5.4
0.6
5.4
10
8.5
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Cycles
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
All voltage values are with respect to ground with GND and OGND
wired together (unless otherwise noted).
Note 3:
When these pin voltages are taken below GND or above V
DD
, they
will be clamped by internal diodes. This product can handle input currents
of greater than 100mA below GND or above V
DD
without latchup.
Note 4:
V
DD
= 3V, f
SAMPLE
= 125MHz, input range = 2V
P-P
with differential
drive, unless otherwise noted.
Note 5:
Integral nonlinearity is defined as the deviation of a code from a
straight line passing through the actual endpoints of the transfer curve.
The deviation is measured from the center of the quantization band.
Note 6:
Offset error is the offset voltage measured from –0.5 LSB when
the output code flickers between 00 0000 0000 0000 and
11 1111 1111 1111.
Note 7:
Guaranteed by design, not subject to test.
Note 8:
V
DD
= 3V, f
SAMPLE
= 125MHz, input range = 1V
P-P
with differential
drive. The supply current and power dissipation are the sum total for both
Generating Code...
Linking...
CVTRES : fatal error CVT1102: out of memory; 42 bytes required
LINK : fatal error LNK1123: failure during conversion to COFF: file invalid or corru ......
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
xi 在国际测试大会上，英特尔公司副总裁兼副总经理Gadi Singer在题为“应对频谱纳米技术和千兆复杂性的挑战”的演讲中指出，从1940年以来，每立方英尺MIPS或每磅MIPS数每10年就增加100倍。虽然在平滑的曲线上一直是以指数规律变化，但是，在那个时期仍然有许多不连续性和变形点。 “目前，四个不同的趋势正延伸在所有方向中的曲线，”Singer说道。首先，IC复杂性和多样性...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
