HMC-AUH256
v00.0907
GaAs HEMT MMIC DRIVER
AMPLIFIER, 17.5 - 41.0 GHz
Features
Gain: 21 dB
P1dB Output Power: +20 dBm
Wideband Performance: 17.5 to 40 GHz
Supply Voltage: +5V @ 295 mA
Small Chip Size: 2.1 x 0.92 x 0.1 mm
Typical Applications
This HMC-AUH256 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC-AUH256 is a GaAs MMIC HEMT four stage
Driver Amplifier which covers the frequency range
of 17.5 to 40 GHz. The chip can easily be integrated
into Multi-Chip-Modules (MCMs) due to its small (1.93
mm2) size. The HMC-AUH256 offers 21 dB of gain
and +20 dBm output power at 1 dB compression from
a bias supply of +5V @ 295 mA. The HMC-AUH256
may also be used as a frequency doubler. Detail bias
condition to achieve doubler operation.
Vdd1 = Vdd2 = Vdd3 = Vdd4 = 5V, Idd1 + Idd2 + Idd3 + Idd4 = 295mA
[2]
Parameter
Frequency Range
Gain
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Saturated Output Power
Output IP3
Supply Current (Idd1 + Idd2 + Idd3 + Idd4)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1 = Vgg2 = Vgg3 = Vgg4 between -1V to +0.3V (Typ. -0.3V)
20 - 30 GHz
30 - 45 GHz
Min.
Typ.
17.5 - 41
21
8
15
8
20
23
27
295
Max.
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
mA
Electrical Specifi cations
[1]
,
T
A
= +25°C
0-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH256
v00.0907
GaAs HEMT MMIC DRIVER
AMPLIFIER, 17.5 - 41.0 GHz
Linear Gain vs. Frequency
Fixtured Pout vs. Frequency
IP3 @ Pout= 18 dBm/tone
P1dB
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
Note: Measured Performance Characteristics (Typical Performance at 25°C)
Vd1= Vd2= Vd3= Vd4= 5V, Id1= 50mA, Id2= 50mA, Id3= 75mA, Id4= 120mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
-7
P3dB
HMC-AUH256
v00.0907
GaAs HEMT MMIC DRIVER
AMPLIFIER, 17.5 - 41.0 GHz
x2 Pout vs. Frequency (vs Pad)
Fixtured Pout vs.
Frequency @ Pin= 8 dBm
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
Fixtured Pout vs.
Frequency @ Pin= 10 dBm
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power
Drain Bias Current (Idd1, Idd2)
Drain Bias Current (Idd3)
Drain Bias Current (Idd4)
Gate Bias Voltage
Channel Temperature
Thermal Resistance
(channel to die bottom)
Storage Temperature
+5.5 Vdc
15 dBm
62 mA
93 mA
150 mA
-1 to +0.3 Vdc
180 °C
77.5 °C/W
-65 to +150 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Note: Multiplier Performance Characteristics (Typical Performance at 25°C)
Vd1= 2V, Vd2= Vd3= Vd4= 5V, Id1= 5mA, Id2+Id3+Id4= 245mA
0-8
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-AUH256
v00.0907
GaAs HEMT MMIC DRIVER
AMPLIFIER, 17.5 - 41.0 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - CHIP
-9
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