Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage ,high speed
APPLICATIONS
・Particularly
suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE13007
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
T
j
T
stg
固电
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
导½
半
PARAMETER
CONDITIONS
Open emitter
Open base
HA
INC
Base current
Base current-Peak
Emitter current
Collector current (DC)
ES
NG
Open collector
MIC
E
OR
CT
NDU
O
VALUE
700
400
9
8
16
4
8
12
24
UNIT
V
V
V
A
A
A
A
A
A
W
℃
℃
Collector current-Peak
Emitter current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
80
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.56
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=2A; I
B
=0.4A
I
C
=5A ;I
B
=1.0A
T
C
=100℃
I
C
=8A ;I
B
=2.0A
I
C
=2A ;I
B
=0.4A
I
C
=5A ;I
B
=1.0A
T
C
=100℃
V
CB
=700V; I
E
=0
T
C
=125℃
V
EB
=9V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
8
5
MIN
400
MJE13007
TYP.
MAX
UNIT
V
1.0
2.0
3.0
3.0
1.2
1.6
1.5
0.1
1.0
0.1
V
V
V
V
V
mA
mA
固电
Rise time
Transition frequency
导½
半
Switching times resistive load
t
d
t
r
t
s
t
f
Delay time
ANG
CH
IN
Collector outoput capacitance
Storage time
Fall time
MIC
E SE
V
CC
=125V ,I
C
=5A
I
B1
=-I
B2
=1.0A
t
p
=25μs
duty cycle≤1%
I
C
=0.5A ; V
CE
=10V;f=1MHz
I
E
=0; f=0.1MHz ; V
CB
=10V
OR
CT
NDU
O
30
4
80
0.1
1.5
3.0
0.7
40
MHz
pF
μs
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE13007
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance: 0.10mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE13007
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE13007
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
5
能源基础设施
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