Rev.1.1
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
The S-8261 series are lithium-ion/lithium polymer rechargeable
battery protection ICs incorporating high-accuracy voltage detection
circuit and delay circuit.
The S-8261 series are suitable for protection of single-cell lithium
ion/lithium polymer battery packs from overcharge, overdischarge and
overcurrent.
T
Features
(1)
Internal high accuracy voltage detection circuit
•
•
Overcharge detection voltage
Overcharge hysteresis voltage
3.9V to 4.4V
(applicable in 5mV step)
Accuracy : ±25mV (+25°C) and ±30mV (-5°C to +55°C)
0.0V to 0.4V (*1)
Accuracy : ±25mV
The overcharge hysteresis voltage can be selected from the range 0.0V to 0.4V in 50mV step.
*1: Overcharge release voltage = Overcharge detection voltage - Overcharge hysteresis voltage
(where overcharge release voltage<3.8V is prohibited.)
•
•
Overdischarge detection voltage
Overdischarge hysteresis voltage
2.0V to 3.0 V (10mV step)
0.0V to 0.7 V (*2)
Accuracy : ±50mV
Accuracy : ±50mV
The overdischarge hysteresis voltage can be selected from the range 0.0V to 0.7V in 100mV step.
*2: Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(where overdischarge release voltage>3.4V is prohibited.)
•
Overcurrent 1 detection voltage
0.05V to 0.3V (10mV step)
•
Overcurrent 2 detection voltage
0. 5V (fixed)
(2) High voltage device is used for charger connection pins
VM and CO pins: absolute maximum rating = 28V
(3)
(4)
(5)
(6)
Accuracy : ±15mV
Accuracy : ±100mV
Delay times (overcharge: t
CU
, overdischarge: t
DL
, overcurrent 1: t
lOV1
, overcurrent 2: t
lOV2
) are
generated by an internal circuit. No external capacitor is necessary.
Accuracy : ±20%
Three-step overcurrent detection circuit is included. (overcurrent 1, overcurrent 2, and load short-
circuiting)
Either charge function or charge inhibition function for 0V battery can be selected.
Charger detection function and abnormal charge current detection function
The overdischarge hysteresis is released by detecting negative voltage at the VM pin (-0.7V
typ.). (Charger detection function)
•
When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower
than the charger detection voltage (-0.7V typ.), the output voltage of the CO pin goes low.
(Abnormal charge current detection function)
Low current consumption
•
Operation
3.5
µA
typ.
•
Power-down
0.1
µA
max.
Wide operating temperature range:
Small package
7.0
µA
max.
-40°C to +85°C
•
(7)
(8)
(9)
SOT-23-6 (6-pin) SNB(B) (6-pin)
T
Applications
•
•
Lithium-ion rechargeable battery packs
T
Package
•
6-Pin SOT-23-6 (PKG drawing code : MP006-A)
Lithium polymer rechargeable battery packs
•
6-Pin SNB(B) (PKG drawing code : BD006-A)
Seiko Instruments Inc.
1
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
Block Diagram
DP
Rev.1.1
Output control circuit
Oscillator control circuit
VDD
Divider
control logic
0V battery
charge/charge
inhibition circuit
DO
+
−
Overcharge
detection
comparator
Charger
detection circuit
CO
+
−
Overcurrent 1
detection comparator
RVMD
+
−
Overcurrent 2
detection comparator
RVMS
VM
Overdischarge
detection
comparator
+
−
+
Load short-circuiting
detection comparator
−
VSS
Note: Diodes in the figure are parasitic diodes.
Figure 1 Block Diagram
2
Seiko Instruments Inc.
Rev.1.1
Selection Guide
Naming of product model number
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
Model number: S-8261Axxyy
−
abbreviation code (3 letters)
−zz
Symbol
Meaning
Description
xx
yy
zz
Serial code
Package form
Tape direction
Assigned from AA to ZZ in alphabetical order.
MD:SOT-23-6
T2:SOT-23-6
BD:SNB
TF:SNB
Model No.
S-8261AAGMD-G2G -T2
S-8261AAHMD-G2H -T2
S-8261AAJMD-G2J -T2
Over-
charge
detection
voltage
4.28 V
4.28 V
4.325V
Over-
charge
release
voltage
0.2 V
0.2 V
0.25V
Over-
discharge
detection
voltage
2.3 V
2.3 V
2.5V
Over-
discharge
release
voltage
2.3 V
2.3 V
0.4V
Over-
current 1
detection
voltage
0.16 V
0.08 V
0.15V
0V battery
charge
function
Yes
Yes
None
Model No.
S-8261AAGMD-G2G -T2
S-8261AAHMD-G2H -T2
S-8261AAJMD-G2J -T2
Over-
charge
detection
delay time
1.2 s
1.2 s
1.2 s
Over-
discharge
detection
delay time
144 ms
144 ms
144 ms
Over-
current 1
detection
delay time
9 ms
9 ms
9 ms
It is possible to change the detection voltages of the product other than above. The delay times can also be changed within the
range listed bellow. For details, please contact our sales office.
Delay time
Overcharge detection delay time
Overdischarge detection delay time
Overcurrent 1 detection delay time
Symbol
t
CU
t
DL
t
lOV1
Selection range
0.15 s
36 ms
4.5 ms
1.2 s
144 ms
9 ms
4.6 s
290 ms
18 ms
Remarks
Choose from the left.
Choose from the left.
Choose from the left.
* Values surrounded by bold lines are used in standard products.
Seiko Instruments Inc.
3
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
Pin Assignment
Pin No.
6
SOT-23-6
Top view
5 4
Rev.1.1
Symbol
DO
VM
Description
FET gate control pin for
discharge (CMOS output)
Voltage detection pin between
VM and VSS
(Overcurrent detection pin)
FET gate control pin for charge
(CMOS output)
Test pin for delay time
measurement
Positive power input pin
Negative power input pin
1
2
1
2
3
3
4
5
6
CO
DP
VDD
VSS
Figure 2
Pin No.
1
6
5
4
Symbol
CO
VM
Description
FET gate control pin for charge
(CMOS output)
Voltage detection pin between
VM and VSS
(Overcurrent detection pin)
FET gate control pin for
discharge (CMOS output)
Negative power input pin
Test pin for delay time
measurement
Positive power input pin
2
6-Pin SNB(B)
Top view
1
2
3
3
Figure 3
4
5
6
DO
VSS
DP
VDD
T
Absolute Maximum Ratings
(Ta = 25°C unless otherwise specified)
Parameter
Input voltage between VDD
and VSS *
Input pin voltage for VM
Output pin voltage for CO
Output pin voltage for DO
Power
dissipation
SOT-23-6
SNB(B)
Symbol
V
DS
V
VM
V
CO
V
DO
P
D
P
D
T
opr
T
stg
Applied pin
VDD
VM
CO
DO
Rating
V
SS
-0.3 to V
SS
+12
V
DD
-28 to V
DD
+0.3
V
M
-0.3 to V
DD
+0.3
V
SS
-0.3 to V
DD
+0.3
250
90
-40 to +85
-55 to +125
Unit
V
V
V
V
mW
mW
°C
°C
Operating temperature range
Storage temperature range
Note:
Aithough the IC contains protection circuit against static electricity, excessive static electricity or voltage which exceeds the
limit of the protection circuit should not be applied to.
*
Do not apply pulse-like noise of
µs
order exceeding the above input voltage (V
SS
+ 12 V). The noise causes damage to
the IC.
4
Seiko Instruments Inc.
Rev.1.1
BATTERY PROTECTION IC for SINGLE-CELL PACK
S-8261 Series
T
Electrical Characteristics (1) Except detection delay time (25°C)
(Ta = 25°C
Parameter
DETECTION VOLTAGE
Overcharge detection voltage
V
CU
=3.9V to 4.4V
5mV Step
−
V
CU
1
Ta= -5°C to 55°C(*1)
V
CU
-0.025
V
CU
-0.030
V
CU
V
CU
V
CU
+0.025
V
CU
+0.030
V
1
unless otherwise specified)
Typ.
Max.
Unit
ment
Measure-
circuit
Symbol
Condition
Remark
Min.
Overcharge hysteresis voltage
V
HC
=0.0V to 0.4V
50mV Step
Overdischarge detection voltage
V
DL
=2.0V to 3.0V
10mV Step
Overdischarge hysteresis voltage
V
HD
=0.0V to 0.7V
100mV Step
Overcurrent 1 detection voltage
V
IOV1
=0.05V to 0.3V
10mV Step
Overcurrent 2 detection voltage
Load short-circuiting detection voltage
Charger detection voltage
V
HC
1
−
−
V
HC
-0.025
V
DL
-0.050
V
HC
V
HC
+0.025
V
DL
+0.050
V
1
V
DL
2
V
DL
V
2
V
HD
2
−
V
HD
-0.050
V
IOV1
-0.015
0.4
0.9
-1.0
V
HD
V
HD
+0.050
V
IOV1
+0.015
0.6
1.5
-0.4
V
2
V
IOV1
V
IOV2
V
SHORT
V
CHA
3
3
3
4
−
−
−
−
V
IOV1
0.5
1.2
-0.7
V
V
V
V
2
2
2
2
INPUT VOLTAGE, OPERATION VOLTAGE
Operation voltage between VDD and VSS
Operation voltage between VDD and VM
V
DSOP1
V
DSOP2
−
−
Internal circuit operating voltage
Internal circuit operating voltage
1.5
1.5
−
−
8
28
V
V
−
−
CURRENT CONSUMPTION
Current consumption in normal operation
Current consumption at power down
I
OPE
I
PDN
5
5
V
DD
=3.5V, V
M
=0V
V
DD
=V
M
=1.5V
1.0
−
3.5
−
7.0
0.1
µA
µA
2
2
OUTPUT RESISTANCE
CO pin H resistance
CO pin L resistance
DO pin H resistance
DO pin L resistance
R
COH
R
COL
R
DOH
R
DOL
7
7
8
8
V
CO
=3.0V,V
DD
=3.5V,V
M
=0V
V
CO
=0.5V,V
DD
=4.5V,V
M
=0V
V
DO
=3.0V,V
DD
=3.5V,V
M
=0V
V
DO
=0.5V,V
DD
=V
M
=1.8V
2.5
2.5
2.5
2.5
5
5
5
5
10
10
10
10
kΩ
kΩ
kΩ
kΩ
4
4
4
4
VM INTERNAL RESISTANCE
Internal resistance between VM and VDD
Internal resistance between VM and VSS
R
VMD
R
VMS
6
6
V
DD
=1.8V, V
M
=0V
V
DD
= 3.5V, V
M
=1.0V
100
10
300
20
900
40
kΩ
kΩ
3
3
0V BATTERY CHARGING FUNCTION
0V battery charge starting
charger voltage
0V battery charge inhibition
battery voltage
V
0CHA
V
0INH
11
12
Applied for 0V battery charge
function
Applied for 0V battery charge
inhibition function
1.2
−
−
−
−
0.5
V
V
2
2
(*1) : Since products are not screened at low and high temperature, the specification for this temperature range is guaranteened by
design, not tested in production.
Seiko Instruments Inc.
5
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