IS61(64)LF12832A IS64VF12832A
IS61(64)LF12836A IS61(64)VF12836A
IS61(64)LF25618A IS61(64)VF25618A
128K x 32, 128K x 36, 256K x 18
4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
FEBRUARY 2014
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LF: V
dd
3.3V + 5%,
V
ddq
3.3V/2.5V + 5%
VF: V
dd
2.5V -5% +10%,
V
ddq
2.5V -5% +10%
• JEDEC 100-Pin QFP, 119-pin BGA, and 165-pin
BGA packages
• Automotive temperature available
• Lead-free available
LF/VF12836A and IS61(64)LF/VF25618A are high-speed,
low-power synchronous static RAMs designed to provide
burstable, high-performance memory for communication
and networking applications. The IS61(64)LF12832A is
organized as 131,072 words by 32 bits. The IS61(64)LF/
VF12836A is organized as 131,072 words by 36 bits. The
IS61(64)LF/VF25618A is organized as 262,144 words by
18 bits. Fabricated with
ISSI
's advanced CMOS technol-
ogy, the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write en-
able (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or
ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the
ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Interleave
burst is achieved when this pin is tied HIGH or left floating.
DESCRIPTION
The
ISSI
IS61(64)LF12832A, IS64VF12832A, IS61(64)
FAST ACCESS TIME
Symbol
t
kq
t
kc
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2014 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.
Rev. G1
2/11/2014
1
Microchip MCU
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