RN2712JE,RN2713JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2712JE, RN2713JE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (5 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
A wide range of resistor values is available for use in various circuits.
Unit : mm
Equivalent Circuit
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.003g(typ.)
―
―
2-2P1D
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Equivalent Circuit
(top view)
5
Q1
4
Q2
1
2
3
1
2007-11-01
RN2712JE,RN2713JE
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2712JE
RN2713JE
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
―
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−1mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
―
Min
―
―
120
―
―
―
15.4
32.9
Typ.
―
―
―
−0.1
200
3
22
47
Max
−100
−100
400
−0.3
―
6
28.6
61.1
Unit
nA
nA
―
V
MHz
pF
kΩ
2
2007-11-01
嵌入式系统
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