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RN1705(T5LHLS,F)

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
产品类别分立半导体    晶体管   
文件大小462KB,共7页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1705(T5LHLS,F)概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

RN1705(T5LHLS,F)规格参数

参数名称属性值
包装说明SMALL OUTLINE, R-PDSO-G5
Reach Compliance Codeunknown
其他特性BUILT IN BIAS RESISTANCE RATIO IS 21.36
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)80
JESD-30 代码R-PDSO-G5
元件数量2
端子数量5
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
Base Number Matches1

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RN1701~RN1706
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1701, RN1702, RN1703
RN1704, RN1705, RN1706
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in USV (ultra super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2701 to RN2706
Equivalent Circuit and Bias Resistor Values
Type No.
RN1701
RN1702
RN1703
RN1704
RN1705
RN1706
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
USV
JEDEC
JEITA
TOSHIBA
2-2L1A
Weight: 6.2mg (typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1701 to 1706
RN1701 to 1706
RN1701 to 1704
RN1705, 1706
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1992-01
1
2014-03-01

RN1705(T5LHLS,F)相似产品对比

RN1705(T5LHLS,F) RN1704,LF RN1704,LF(T RN1702,LF RN1701,LF RN1705,LF RN1706,LF RN1703,LF RN1703(T5LHLS,F) RN1706(T5RMAA,F)
描述 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Base Number Matches 1 1 1 1 1 1 1 - - -

 
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