SMD Type
Schottky Barrier Diodes
MA3XD14E
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Diodes
Unit: mm
+0.1
2.4
-0.1
Features
Mini type 3-pin package
Low forward rise voltage V
F
(V
F
< 0.4 V)
Cathode common type
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maxim um Ratings Ta = 25
Param eter
Reverse voltage (DC)
Repetitive peak reverse-voltage
Non-repetitive peak forward-surge-current (Note 2)
Forward current (DC)
Single
Double (Note 1)
Peak forward current
Single
Double (Note 1)
Junction tem perature
Storage tem perature
Note
1 : The value for operating one chip
2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
T
j
T
stg
I
FM
Sym bol
V
R
I
RRM
I
FSM
I
F
Rating
20
20
1
100
70
300
200
125
-55 to+ 150
mA
Unit
V
V
A
mA
Electrical Characteristics Ta = 25
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time*
Note
1. This product is sensitive to electric shock (static electricity, etc.).Due attention must be paid
on the charge of a human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. * : t
rr
measuring circuit
Symbol
I
R
V
F
C
t
t
rr
Conditions
V
R
= 10 V
I
F
= 5 mA
I
F
= 100 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA, R
L
= 100
25
3.0
Min
Typ
Max
20
0.27
0.40
Unit
A
V
V
pF
ns
Marking
Marking
M5H
0-0.1
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