SMD Type
PNP Silicon Transistor
CZT5401
SOT-223
+0.2
6.50
-0.2
Transistors
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
1
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
È
JA
Rating
160
150
5
600
2
-65 to 150
62.5
/W
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Symbol
I
CBO
I
CBO
I
EBO
B
VCBO
B
VCEO
B
VEBO
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(SAT)
V
CB
=100V
V
CB
=100V, T
A
=150
V
EB
=3.0V
I
C
=100ìA
I
C
=1.0mA
I
E
=10ìA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
V
CE
=5.0V, I
C
=1.0mA
h
FE
V
CE
=5.0V, I
C
=10mA
V
CE
=5.0V, I
C
=50mA
f
T
C
ob
h
fe
N
F
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1.0MHz
V
CE
=10V, I
C
=1.0mA, f=1.0kHz
V
CE
=5.0V, I
C
=200mA, R
S
=10
Ù,f=10Hz to 15.7kHz
40
50
60
50
100
300
6.0
200
8.0
dB
MHz
pF
240
160
150
5.0
0.2
0.5
1.0
1.0
Testconditons
Min
Max
50
50
50
Unit
nA
mA
nA
V
V
V
V
V
V
V
+0.15
1.65
-0.15
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