SMD Type
General Purpose Transistors
FMMT4400
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
General purpose transistors.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j,
T
stg
Rating
60
40
6
600
330
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cut-off current
Base cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product
Output capacitance
Input capacitance
Delay time
Storage time
* Pulse test: tp
300 ìs; d
0.02.
Symbol
V
(BR)CBO
I
C
=0.1mA
V
(BR)CEO
I
C
=1mA
V
(BR)EBO
I
E
=0.1mA
I
CEX
I
BEX
h
FE
V
CE(
sat)
V
BE(
sat)
f
T
C
obo
C
ibo
t
on
t
off
V
CE
=35V V
EB(off)
=0.4V
V
CE
=35V V
EB(off)
=3V
I
C
=150mA, V
CE
=1V
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=150mA,I
B
=15mA
I
C
=500mA,I
B
=50mA
I
C
=20mA, V
CE
=10V f=100KHz
V
CB
=5V, I
E
=0, f=100KHz
V
BE
=0.5V, I
C
=0, f=100KHz
V
CC
=30V, I
C
=150mA,I
B1
=15mA
V
BE(off)
=2V
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
0.75
200
6.5
30
35
255
50
Testconditons
Min
60
40
6
0.1
0.1
150
0.4
0.75
0.95
1.2
V
V
MHz
pF
pF
ns
ns
Typ
Max
Unit
V
V
V
ìA
ìA
Marking
Marking
1KZ
0-0.1
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