SMD Type
Silicon Schottky Barrier Diode
HSB276S
Diodes
Features
High forward current, Low capacitance.
HSB276S which is interconnected in series
configuration is designed for balanced mixer use.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A b s o lu t e M a x im u m R a t in g s T a = 2 5
P a ra m e te r
R e v e r s e v o lt a g e
A v e r a g e r e c t if ie d c u r r e n t
J u n c t io n t e m p e r a t u r e
S to ra g e te m p e ra tu re
S ym bol
V
R
I
O
T
j
T
s tg
V a lu e
3
30
125
-5 5 to + 1 2 5
U n it
V
mA
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Forward current
Capacitance
Capacitance deviation
ESD-Capability (Note 1)
Note
1. Failure criterion ; I
R
100
A at V
R
=0.5 V
Symbol
V
F
I
R
I
F
C
ÄC
Conditions
I
F
=1.0 mA
V
R
=0.5 V
V
F
=0.5 V
V
R
= 0.5 V, f = 1 MHz
V
R
= 0.5V, f = 1 MHz
C=200pF, Both forward and
reverse direction 1 pulse.
30
35
0.90
0.10
Min
3
50
Typ
Max
Unit
V
A
mA
pF
pF
V
Marking
Marking
C2
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