Si4483EDY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
−30
FEATURES
I
D
(A)
−14
−11
r
DS(on)
(W)
0.0085 @ V
GS
=
−10
V
0.014 @ V
GS
=
−4.5
V
D
TrenchFETr Power MOSFET
D
ESD Protection: 3000 V
APPLICATIONS
D
Notebook PC
−
Load Switch
−
Adapter Switch
S
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4483EDY—E3
Si4483EDY-T1—E3 (with tape and reel)
8
7
6
5
D
D
D
D
G
7100
W
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
−30
"25
Unit
V
−14
−11
−50
−2.7
3.0
1.9
−55
to 150
−10
−8
A
−1.36
1.5
0.95
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72862
S-40580—Rev. A, 29-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
33
70
16
Maximum
42
85
21
Unit
_C/W
C/W
1
Si4483EDY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body
Gate Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
=
−250
mA
V
DS
= 0 V, V
GS
=
"
4.5
V
V
DS
= 0 V, V
GS
=
"25
V
V
DS
=
−30
V, V
GS
= 0 V
V
DS
=
−30
V, V
GS
= 0 V, T
J
= 70_C
V
DS
=
−5
V, V
GS
=
−10
V
V
GS
=
−10
V, I
D
=
−14
A
V
GS
=
−4.5
V, I
D
=
−11
A
V
DS
=
−15
V, I
D
=
−14
A
I
S
=
−2.7
A, V
GS
= 0 V
−30
0.007
0.0115
60
−0.74
−1.1
0.0085
0.014
−1.0
3.0
"1
"10
−1
−10
V
mA
mA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
Dynamic
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=
−15
V, R
L
= 15
W
I
D
^
−1
A, V
GEN
=
−10
V, R
g
= 6
W
10
20
42
50
15
30
65
80
ms
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
1000
100
I
GSS
−
Gate Current (mA)
6
I
GSS
−
Gate Current (
mA)
10
1
Gate Current vs. Gate-Source Voltage
T
J
= 150_C
T
J
= 25_C
4
0.1
0.01
2
0
0
5
10
15
20
25
30
0.001
0
6
12
18
24
30
V
GS
−
Gate-to-Source Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 72862
S-40580—Rev. A, 29-Mar-04
Si4483EDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V
GS
= 10 thru 4 V
40
I
D
−
Drain Current (A)
3V
I
D
−
Drain Current (A)
40
50
Vishay Siliconix
Transfer Characteristics
30
30
20
20
T
C
= 125_C
10
25_C
−55_C
2.0
2.5
3.0
3.5
10
0
0
1
2
3
4
5
V
DS
−
Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
V
GS
−
Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
1.6
On-Resistance vs. Junction Temperature
r
DS(on)
−
On-Resistance (
W
)
0.016
r
DS(on)
−
On-Resiistance
(Normalized)
40
50
1.4
0.012
V
GS
= 4.5 V
1.2
0.008
V
GS
= 10 V
1.0
0.004
0.8
0.000
0
10
20
30
0.6
−50
−25
0
25
50
75
100
125
150
I
D
−
Drain Current (A)
T
J
−
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.05
On-Resistance vs. Gate-to-Source Voltage
10
r
DS(on)
−
On-Resistance (
W
)
I
S
−
Source Current (A)
T
J
= 150_C
0.04
0.03
I
D
= 14 A
1
T
J
= 25_C
0.02
0.01
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V)
V
GS
−
Gate-to-Source Voltage (V)
www.vishay.com
Document Number: 72862
S-40580—Rev. A, 29-Mar-04
3
Si4483EDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
0.6
V
GS(th)
Variance (V)
I
D
= 250
mA
0.4
0.2
0.0
−0.2
−0.4
−50
10
Power (W)
30
50
Single Pulse Power
40
20
−25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
−
Temperature (_C)
100
Limited by r
DS(on)
10
I
D
−
Drain Current (A)
Safe Operating Area, Junction-to-Case
1 ms
10 ms
1
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70_C/W
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72862
S-40580—Rev. A, 29-Mar-04
Si4483EDY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72862
S-40580—Rev. A, 29-Mar-04
www.vishay.com
5
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