Si7463DP
Vishay Siliconix
P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 40
FEATURES
I
D
(A)
- 18.6
- 15
r
DS(on)
(W)
0.0092 @ V
GS
= - 10 V
0.014 @ V
GS
= - 4.5 V
D
TrenchFETr Power MOSFET
D
New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
APPLICATIONS
D
Automotive
- 12-V Boardnet
- High-Side Switches
- Motor Drives
S
PowerPAK SO-8
6.15 mm
S
1
2
S
3
S
5.15 mm
G
4
D
8
7
D
6
D
5
D
G
D
P-Channel MOSFET
Bottom View
Ordering Information: Si7463DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
Steady State
- 40
"20
Unit
V
- 18.6
- 15
- 60
- 4.5
5.4
3.4
- 55 to 150
- 11
- 8.9
A
- 1.6
1.9
1.2
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72440
S-31862—Rev. A, 15-Sep-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
_C/W
C/W
1
Si7463DP
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= - 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 18.6 A
V
GS
= - 4.5 V, I
D
= - 15 A
V
DS
= - 15 V, I
D
= - 18.6 A
I
S
= - 4.5 A, V
GS
= 0 V
- 40
0.0075
0.011
50
- 0.8
- 1.2
0.0092
0.014
-1
-3
"100
-1
- 10
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= - 4.5 A, di/dt = 100 A/ms
V
DD
= - 20 V, R
L
= 20
W
I
D
^
- 1 A, V
GEN
= - 10 V, R
G
= 6
W
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 18.6 A
121
19.2
30.3
2.7
20
25
200
100
45
30
40
300
150
70
ns
W
140
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
60
50
40
30
20
10
0
0
1
Output Characteristics
V
GS
= 10 thru 4 V
60
50
40
30
20
10
0
0.0
Transfer Characteristics
I
D
- Drain Current (A)
3V
I
D
- Drain Current (A)
T
C
= 125_C
25_C
- 55_C
2
3
4
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source Voltage (V)
www.vishay.com
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72440
S-31862—Rev. A, 15-Sep-03
2
Si7463DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.016
0.014
r
DS(on)
- On-Resistance (
W
)
C - Capacitance (pF)
0.012
0.010
0.008
0.006
0.004
0.002
0.000
0
10
20
30
40
50
60
V
GS
= 10 V
On-Resistance vs. Drain Current
8000
7000
6000
5000
4000
3000
2000
Capacitance
V
GS
= 4.5 V
C
iss
C
oss
1000
C
rss
0
0
8
16
24
32
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 18.6 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 18.6 A
6
r
DS(on)
- On-Resistance (
W)
(Normalized)
50
75
100
125
8
1.4
1.2
4
1.0
2
0.8
0
0
25
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
0.04
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
- On-Resistance (
W
)
I
S
- Source Current (A)
0.03
I
D
= 18.6 A
0.02
T
J
= 150_C
10
I
D
= 5 A
T
J
= 25_C
0.01
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 72440
S-31862—Rev. A, 15-Sep-03
www.vishay.com
3
Si7463DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
0.6
V
GS(th)
Variance (V)
0.4
0.2
0.0
- 0.2
- 0.4
- 50
20
I
D
= 250
mA
80
100
Single Pulse Power, Juncion-To-Ambient
Power (W)
60
40
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
T
J
- Temperature (_C)
100
r
DS(on)
Limited
10
I
D
- Drain Current (A)
Safe Operating Area
I
DM
Limited
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
1
0.1
T
A
= 25_C
Single Pulse
BV
DSS
Limited
P(t) = 10
dc
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 52_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
www.vishay.com
4
Document Number: 72440
S-31862—Rev. A, 15-Sep-03
Si7463DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
Square Wave Pulse Duration (sec)
10
-1
1
Document Number: 72440
S-31862—Rev. A, 15-Sep-03
www.vishay.com
5
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
