RH1083M
7.5A Low Dropout
Positive Adjustable Regulator
DESCRIPTIO
U
The wafer lots are processed to Linear Technology
Corporation’s in-house Class S flow-to-yield circuits us-
able in stringent military applications.
Since the TO-3 package on this product cannot meet the
cracked glass external visual criteria of MIL-STD-883
Method 2009, inspection for cracked glass at 100% exter-
nal visual will not be performed. Instead a 100% fine/gross
leak test will be performed just prior to shipment.
The RH1083M is pin compatible with older 3-terminal
regulators. A 10μF output capacitor is required on this new
device. However, this is usually included in most regulator
designs.
Unlike PNP regulators, where up to 10% of the output
current is wasted as quiescent current, the RH1083M
quiescent current flows into the load, increasing efficiency.
ABSOLUTE
AXI U
RATI GS
Power Dissipation .............................. Internally Limited
Input-to-Output Voltage Differential ........................ 30V
Operating Junction Temperature Range
Control Circuitry ............................ – 55°C to 150°C
Power Transistor ........................... – 55°C to 200°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec.)................ 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.
BUR -I CIRCUIT
PACKAGE I FOR ATIO
BOTTOM VIEW
RH1083M
18V
IN
ADJ
121Ω
–18V
1k
OUT
V
IN
2
CASE
IS OUTPUT
1
ADJ
CAPACITOR(S) NOT SHOWN
RH1083 BI
K PACKAGE
2-LEAD TO-3 METAL CAN
(STEEL)
U
U
W W
W
W
The RH1083M positive adjustable regulator is designed to
provide 7.5A with higher efficiency than currently avail-
able devices. All internal circuitry is designed to operate
down to 1V input-to-output differential and the dropout
voltage is fully specified as a function of load current.
Dropout is guaranteed at a maximum of 1.5V at maximum
output current, decreasing at lower load currents. On-chip
trimming adjusts the output voltage to 1%. Current limit is
also trimmed, minimizing the stress on both the regulator
and power source circuitry under overload conditions.
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1
RH1083M
TABLE 1: ELECTRICAL CHARACTERISTICS
PARAMETER
Reference Voltage
CONDITIONS
I
OUT
= 10mA, (V
IN
– V
OUT
) = 3V
10mA
≤
I
OUT
≤
I
FULLLOAD
,
1.5V
≤
(V
IN
– V
OUT
)
≤
25V
Line Regulation
I
LOAD
= 10mA
1.5V
≤
(V
IN
– V
OUT
) = 15V
15V
≤
(V
IN
– V
OUT
) = 30V
(V
IN
– V
OUT
) = 3V
10mA
≤
I
OUT
≤
I
FULLLOAD
ΔV
REF
= 1%, I
OUT
= I
FULLLOAD
(V
IN
– V
OUT
) = 5V
(V
IN
– V
OUT
) = 25V
(V
IN
– V
OUT
) = 25V
T
A
= 25°C, 30ms Pulse
f = 120Hz, C
ADJ
= 25μF,
C
OUT
= 25μF Tantalum,
I
OUT
= I
FULLLOAD
(V
IN
– V
OUT
) = 3V
60
1,2
0.015
0.2
0.5
0.3
1.5
8.0
0.4
10
0.002 0.010
1
1
1
1
1
1
1
1
4
60
75
5,6
8.0
0.4
NOTES
3
(Preirradiation)
SUB-
–55°C
≤
T
J
≤
125°C
SUB-
GROUP MIN TYP MAX
GROUP
1
1.225 1.250 1.270
2,3
T
J
= 25
°
C
MIN TYP MAX
1.238 1.250 1.262
UNITS
V
V
0.035
0.05
0.2
1.3
9.5
1.0
5.0
0.2
0.5
0.4
1.5
2,3
2,3
2,3
2,3
2,3
2,3
%
%
%
V
A
A
mA
%/W
dB
Load Regulation
Dropout Voltage
Current Limit
Minimum Load Current
Thermal Regulation
Ripple Rejection
1,2,3
4
0.1
10
2,3
Adjust Pin Current
Adjust Pin Current Change 10mA
≤
I
OUT
≤
I
FULLLOAD
,
1.5V
≤
(V
IN
– V
OUT
)
≤
25V
Temperature Stability
Long-Term Stability
RMS Output Noise
(% of V
OUT
)
Thermal Resistance
Junction-to-Case
T
A
= 125°C, 1000 Hours
T
A
= 25°C, 10Hz
≤
f
≤
10kHz
Control Circuitry
Power Transistor
5
5
55
120
5
1
1
0.2
0.5
0.3
120
5.0
2,3
2,3
μA
μA
%
%
%
0.003
0.6
1.6
°C/W
°C/W
TOTAL DOSE BIAS CIRCUIT
15V
V
IN
RH1083
ADJ
V
OUT
150Ω
–15V
RH1083 TDBC
2
RH1083M
TABLE 1A: ELECTRICAL CHARACTERISTICS
PARAMETER
Reference Voltage (Note 3)
CONDITIONS
I
OUT
= 10mA (V
IN
– V
OUT
) = 3V
10mA
≤
I
OUT
≤
I
FULLLOAD
1.5V
≤
(V
IN
– V
OUT
)
≤
15V
Line Regulation (Notes 1, 2)
I
OUT
= 10mA
1.5V
≤
(V
IN
– V
OUT
)
≤
15V
15V
≤
(V
IN
– V
OUT
)
≤
30V
(V
IN
– V
OUT
) = 3V
10mA
≤
I
OUT
≤
I
FULL LOAD
ΔV
REF
= 1%, I
OUT
= I
FULL LOAD
(V
IN
– V
OUT
) = 5V
(V
IN
– V
OUT
) = 25V
(V
IN
– V
OUT
) = 25V
10mA
≤
I
OUT
≤
I
FULLLOAD
1.5V
≤
(V
IN
– V
OUT
)
≤
15V
8
0.4
10
120
5
10KRAD(Si)
MIN
MAX
1.234
1.210
1.258
1.275
1.232
1.219
(Postirradiation)
50KRAD(Si)
MIN
MAX
1.227
1.215
100KRAD(Si)
MIN
MAX
1.247
1.275
200KRAD(Si)
MIN
MAX UNITS
1.216
1.203
1.241
1.275
V
V
20KRAD(Si)
MIN
MAX
1.257
1.275
1.253 1.223
1.275 1.210
0.2
0.5
0.3
1.5
8
0.4
0.21
0.5
0.3
1.55
7.95
0.4
10
120
5
0.23
0.5
0.3
1.65
7.85
0.4
10
120
5
0.25
0.5
0.35
1.8
7.75
0.4
10
120
5
0.3
0.5
0.4
2.0
%
%
%
V
V
V
Load Regulation (Notes 1, 2, 3)
Dropout Voltage (Note 4)
Current Limit
Minimum Load Current
Adjust Pin Current
Adjust Pin Current Change
(Note 5)
10
120
5
mA
μA
μA
Note 1:
See thermal regulation specifications for changes in output voltage
due to heating effects. Line and load regulation are measured at a constant
junction temperature by low duty cycle pulse testing.
Note 2:
Line and load regulation are guaranteed up to the maximum power
dissipation of 60W for RH1083M. Power dissipation is determined by the
input-to-output differential voltage and the output current. Guaranteed
maximum power dissipation will not be available over the full input-to-
output voltage range.
Note 3:
I
FULL LOAD
is defined in the current limit curves in the standard
data sheet. I
FULLLOAD
curve is defined as the minimum value of current
limit as a function of input-to-output voltage. Note that the 60W power
dissipation for the RH1083M is achievable over a limited range of input-to-
output voltage. For compliance with 883 revision C current density
specifications, the RH1083M is rated for 5A.
Note 4:
Dropout voltage is specified over the full output current range of
the device. Test points and limits are shown on the Dropout Voltage curve
in the standard data sheet.
Note 5:
Guaranteed by design, characterization, or correlation to other
tested parameters.
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTS
Final Electrical Test Requirements (Method 5004)
Group A Test Requirements (Method 5005)
Group C and D End-Point Electrical Parameters
(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.
SUBGROUP
1*,2,3
1,2,3
1,2,3
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burn-
in in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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3
RH1083M
TYPICAL PERFORMANCE CHARACTERISTICS
Reference Voltage
1.26
10mA
≤ Δ ≤
I
OUT
≤
I
FULLLOAD
1.5V
≤
(V
IN
– V
OUT
)
≤
15V
REFERENCE VOLTAGE (V)
RIPPLE REJECTION (dB)
1.25
90
85
80
75
70
1.24
CURRENT LIMIT (A)
1.23
1.22
1
10
100
TOTAL DOSE – Krad (Si)
Current Limit
1.1
(V
IN
– V
OUT
) = 25V
1.0
CURRENT LIMIT (A)
0.2
0.3
0.9
0.1
LOAD REGULATION (%)
LINE REGULATION (%)
0.8
0.7
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G04
Dropout Voltage
1.8
I
OUT
= 7.5A
1.6
ADJUST PIN CURRENT (μA)
70
80
MINIMUM LOAD CURRENT (mA)
DROPOUT VOLTAGE (V)
1.4
1.2
1.0
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G07
4
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX
: (408) 434-0507
●
TELEX
: 499-3977
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RH1083 G01
Ripple Rejection
105
100
95
(V
IN
– V
OUT
) = 3V
I
OUT
= I
FULLLOAD
9.5
10.0
Current Limit
(V
IN
– V
OUT
) = 5V
9.0
8.5
1000
65
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G02
8.0
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G03
Line Regulation
0.2
1.5V
≤
(V
IN
– V
OUT
)
≤
15V
I
OUT
= 10mA
0.1
Load Regulation
(V
IN
– V
OUT
) = 3V
10mA
≤
I
OUT
= 7.5A
0
0
–0.1
–0.1
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G05
–0.2
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G06
Adjust Pin Current
4
(V
IN
– V
OUT
) = 3V
10mA
≤
I
L
≤
I
FULLLOAD
Minimum Load Current
(V
IN
– V
OUT
) = 25V
3
60
2
50
1
40
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G08
0
1
10
100
TOTAL DOSE – Krad (Si)
1000
RH1083 G09
I.D. No. 66-11-1083 0796
LT/HP 500 0796 • PRINTED IN USA
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LINEAR TECHNOLOGY CORPORATION 1996
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