Designed with InGaP process technology for improved reliability,
a Darlington configuration is utilized for broadband performance
up to 5 Ghz. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppres-
sion of intermodulation products.
DC-5000 MHz, Cascadable GaAs
HBT MMIC Amplifier
Contact Factory
See Application Note AN-059 for Alternates
Obsolete
Small Signal Gain vs. Frequency
25
20
15
dB
Product Features
High Gain: 18.9dB at 1950Mhz
Cascadable 50 ohm: 1.2:1 VSWR
Operates from Single Supply
Low Thermal Resistance Package
Unconditionally Stable
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Units
dBm
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
2400 M Hz
DC - 5000 M Hz
DC - 5000 M Hz
2000 M Hz
3.5
30
18.8
Min.
Ty p.
14.5
15.0
15.6
25.8
27.0
27.0
20.9
18.9
18.0
5000
1.2:1
1.3:1
2.7
4.0
35
144
4.5
45
23.0
Max.
10
5
0
0
Sy mbol
P
1dB
1
2
3
4
5
Frequency GHz
Parameter
6
7
Output Pow er at 1dB Compression
OIP
3
Output Third Order Intercept Point
dBm
G
Small Signal Gain
dB
M Hz
-
-
dB
V
mA
°C/W
Bandw idth
Determined by Return Loss (>10dB)
Input VSWR
Output VSWR
NF
V
D
I
D
R
TH
, j-l
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
Test Conditions:
V
S
= 8 V
R
BIAS
= 120 Ohms
I
D
= 35 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101103 Rev E
Obsolete
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Key parameters, at typical operating frequencies:
Test Condition
Ty pical
25ºC
Parameter
(I
D
= 35mA, unless otherwise noted)
Unit
500 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Output IP3
Output P1dB
Input Return Loss
Isolation
21.3
25.1
14.6
26.8
23.6
20.9
25.8
14.5
24.8
23.4
18.9
27.0
15.0
22.0
22.2
18.0
27.0
15.6
21.0
21.6
dB
dBm
dBm
dB
dB
dB
dBm
dBm
dB
dB
dB
dBm
dBm
dB
dB
dB
dBm
dBm
dB
dB
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Tone spacing = 1 MHz, Pout per tone = 0dBm
Absolute Maximum Ratings
Parameter
Max.
D evi ce C urrent
(I
D
)
Max.
D evi ce
Voltage (V
D
)
Max.
RF Input Power
Max.
Juncti on Temp
. (T
J
)
Operati ng Temp
. Range (T
L
)
Absolute Limit
70
mA
6V
+10 dBm
+150°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operati on of thi s devi ce beyond any one of these li mi ts may
cause permanent damage. For reli able conti nous operati on,
the devi ce voltage and current must not exceed the maxi mum
operati ng values speci fi ed i n the table on page one.
Bi as C ondi ti ons should also sati sfy the followi ng expressi on:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101103 Rev E
Obsolete
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
S-parameters over frequency, at 25ºC
S21, I
D
=35mA, T=25ºC
S12, I
D
=35mA, T=25ºC
25
20
15
dB
dB
0
-5
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
7
10
5
0
Frequency GHz
S11, I
D
=35mA, T=25ºC
0
1
2
3
4
5
6
7
Frequency GHz
S22, I
D
=35mA, T=25ºC
0
-5
-10
dB
-15
dB
0
-5
-10
-15
-20
-25
-30
0
1
2
3
4
5
6
7
-20
-25
-30
Frequency GHz
0
1
2
3
4
5
6
7
Frequency GHz
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101103 Rev E
Obsolete
Preliminary
NGA-386 DC-5.0 GHz 4.0V GaAs HBT
Basic Application Circuit
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
V
S
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
1
4
NGA-386
3
C
B
RF out
2
R ecommended B ias R esistor Values for I
D
=35mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
6V
56
8V
120
10 V
160
12 V
220
V
S
R
BIAS
1 uF
1000 pF
Note: R
BIAS
provi des D C bi as stabi li ty over temperature.
L
C
C
D
C
B
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
N3
C
B
Part Identification Marking
The part will be marked with an N3 designator on
the top surface of the package.
3
Pin #
1
Function
RF IN
D escription
RF i nput pi n. Thi s pi n requi res the use
of an external D C blocki ng capaci tor
chosen for the frequency of operati on.
C onnecti on to ground. Use vi a holes
for best performance to reduce lead
i nductance as close to ground leads as
possi ble.
2, 4
GND
4
N3
1
2
3
RF OUT/ RF output and bi as pi n. D C voltage i s
BIAS
present on thi s pi n, therefore a D C
blocki ng capaci tor i s necessary for
proper operati on.
Caution: ESD sensitive
Part Number Ordering Information
Part N umber
NGA-386
R eel Siz e
7"
D ev ices/R eel
1000
Appropriate precautions in handling, packaging and
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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