MID75-12A3
IGBT (NPT) Module
V
CES
I
C25
=
=
1200 V
90 A
2.2 V
V
CE(sat)
=
Boost Chopper + free wheeling Diode
Part number
MID75-12A3
Backside: isolated
1
3
4
5
2
Features / Advantages:
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
switching frequency up to 30 kHz
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy parallelling
●
MOS input, voltage controlled
●
ultra fast free wheeling diodes
Applications:
●
AC motor drives
●
Solar inverter
●
Medical equipment
●
Uninterruptible power supply
●
Air-conditioning systems
●
Welding equipment
●
Switched-mode and resonant-mode
power supplies
●
Inductive heating, cookers
●
Pumps, Fans
Package:
Y4
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MID75-12A3
Free Wheeling Diode FWD
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d=1
T
VJ
= 150 °C
1.30
12
0.66
0.66
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 600 V f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25°C
30
190
400
V
mΩ
K/W
K/W
W
A
pF
min.
typ.
max.
1200
1200
650
2
2.50
3.00
1.90
2.30
60
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
50 A
50 A
I
F
= 100 A
I
F
= 100 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
average forward current
T
C
= 80°C
DC current
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MID75-12A3
Boost IGBT
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Ratings
Conditions
T
VJ
=
25°C
min.
typ.
max.
1200
±20
±30
T
C
= 25°C
T
C
= 80 °C
T
C
= 25°C
I
C
=
I
C
=
50 A; V
GE
= 15 V
2 mA; V
GE
= V
CE
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125 °C
V
GE
= ±20 V
V
CE
= 600 V; V
GE
= 15 V; I
C
=
50 A
240
100
inductive load
V
CE
=
600 V; I
C
=
50 A
V
GE
= ±15 V; R
G
= 22
Ω
T
VJ
= 125 °C
70
500
70
7.6
5.6
V
GE
= ±15 V; R
G
= 22
Ω
V
CEmax
= 1200 V
V
CEmax
= 1200 V
V
CE
= 1200 V; V
GE
= ±15 V
R
G
= 22
Ω;
non-repetitive
T
VJ
= 125 °C
180
0.33
10
µs
A
0.33 K/W
K/W
T
VJ
= 125 °C
100
A
6
200
4.5
V
CE
= V
CES
; V
GE
= 0 V
2.2
2.7
5.5
6.5
4
90
60
370
2.7
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
nC
ns
ns
ns
ns
mJ
mJ
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
Boost Diode BD
V
RRM
I
F25
I
F 80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
max. repetitive reverse voltage
forward current
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80 °C
I
F
=
50 A
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
-di
F
/dt = 400 A/µs
I
F
=
50 A; V
GE
= 0 V
T
VJ
= 125°C
1
3.5
40
200
1
0.66
1.80
1200
100
60
2.50
0.65
V
A
A
V
V
mA
mA
µC
A
ns
mJ
0.66 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MID75-12A3
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
Y4
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
300
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
108
2.25
4.5
14.0
16.0
10.0
16.0
3600
3000
2.75
5.5
Assembly
Line
Date Code
Part No.
Circuit Diagram
yywwA
YYYYYYYYYYY
2D Matrix
Ordering
Standard
Part Number
MID75-12A3
Marking on Product
MID75-12A3
Delivery Mode
Box
Quantity
6
Code No.
474193
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
© 2013 IXYS all rights reserved
MID75-12A3
Outlines Y4
67 ±0.2
2.8 x0.5
30 ±0.3
29.5
+0.5
- 0.2
7.5
0.25
M5
Ø 6.5
94 ±0.3
80 ±0.2
M5 x10
18.5 ±0.15
17 ±0.2
General tolerances:
DIN ISO 2768-T1-m
40 ±0.2
63 ±0.2
1
3
4
5
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
8 9
28 ±0.15
20131206a
1
2
3
34 ±0.2
15 ±0.2
10 11
© 2013 IXYS all rights reserved
Ø 12
5 4
7.7
5
7 6
+0.3
- 0.1
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