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DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD168101
MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT
DESCRIPTION
The
µ
PD168101 is monolithic quad H-bridge driver LSI which uses power MOSFETs in the output stages. By
using the MOS process, this driver IC has substantially improved the voltage loss of the output stage and power
consumption as compared with conventional driver circuits using bipolar transistors.
By eliminating the charge pump circuit, the current during power-OFF is drastically decreased.
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning
when the supply voltage drops.
As the package, a 24-pin plastic TSSOP is adopted to enable the creation of compact, slim application sets.
This driver IC can drive two stepping motor at the same time, and is ideal for driving stepping motors in the lens of
a camera. It is the best for lens drive drivers, such as a digital camera and a video camera. Moreover, since the
input of two terminals is respectively owned to H bridge 1 circuit, a maximum of four loads, such as DC motor, can be
driven simultaneously.
FEATURES
Four H bridge circuits employing power MOSFETs
Low current consumption by eliminating charge pump
V
M
pin current when power-OFF: 10
µ
A MAX. V
DD
pin current: 10
µ
A MAX.
Input logic frequency: 100 kHz
3-V power supply
Minimum operating supply voltage: 2.5 V
Low voltage malfunction prevention circuit
24-pin plastic TSSOP (5.72 mm (225))
ORDERING INFORMATION
Part Number
Package
24-pin plastic TSSOP (5.72 mm (225))
µ
PD168101MA-6A5
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S14846EJ1V0DS00 (1st edition)
Date Published April 2001 N CP(K)
Printed in Japan
©
2001
µ
PD168101
CHARACTERISTICS (Unless otherwise specified, V
DD
= V
M
= 3 V, T
A
= 25°C)
°
Parameter
Off state V
M
pin current
V
DD
terminal current at the time of
standby
V
DD
terminal current at the time of
operation
High level input current
Low level input current
Input pull down resistance
High level input voltage
Low level input voltage
H-bridge ON resistance
Low voltage malfunction
prevention circuit operating voltage
H bridge output turn-on time 1
H bridge output turn-on time 2
H bridge output turn-off time
H bridge output rise time
H bridge output fall time
Symbol
I
M(OFF)
Condition
All control terminal = 0 V
Per V
M
terminal
All control terminal = 0 V
MIN.
TYP.
MAX.
10
Unit
µ
A
µ
A
mA
mA
I
DD(ST)
10
I
DD
I
IH
I
IL
R
IND
V
IH
V
IL
R
ON
V
DDS1
V
DDS2
t
ON1
t
ON2
t
OFF
t
r
t
f
R
M
= 20
Ω,
Figure 1
t
ON1
: turn-on time from all
control = 0 V
t
ON2
: turn-on time at operation
2.5 V
≤
V
DD
≤
5.5 V
2.5 V
≤
V
DD
≤
5.5 V
2.7 V
≤
V
M
= V
DD
≤
5.5 V
I
M
= 0.25 A, Upper + lower
V
M
= 5 V,
−10°C ≤
T
A
≤
+85°C
V
M
= 3 V,
−10°C ≤
T
A
≤
+85°C
0.8
0.65
1.0
0.7
0.2
0.3
0.07
V
IN
= V
DD
V
IN
= 0 V
−1.0
50
0.7
×
V
DD
−0.3
0.7
1
0.06
µ
A
200
V
DD
+0.3
0.3
×
V
DD
1.1
2.5
2.5
kΩ
V
V
Ω
V
V
µ
s
2.0
0.5
1.0
0.2
µ
s
µ
s
µ
s
µ
s
Remarks 1.
As for thermal shutdown circuit (TSD), junction temperature operates above 150°C. At the time of over
thermal detection, current supply is stopped by making all output terminals into high impedance. In
addition, thermal shutdown circuit does not operate at the time of standby.
2.
A low voltage malfunction operation prevention circuit operates, if a voltage power supply (V
DD
)
becomes less than 2.5 V. All output terminals be high impedance at the time of UVLO operation.
Data Sheet S14846EJ1V0DS
3
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