EMH11 / UMH11N / IMH11A
EMH11FHA / UMH11NFHA / IMH11AFRA
NPN 100mA 50V Complex Digital Transistors
(Bias Resistor Built-in Transistors)
lOutline
Parameter
Tr1 and Tr2
EMT6
(6)
(1)
(5)
(4)
Datasheet
AEC-Q101 Qualified
UMT6
(6)
(1)
(5)
(4)
I
C(MAX.)
R
1
R
2
V
CC
50V
100mA
10kW
10kW
SMT6
(2)
(3)
(2)
(3)
EMH11
EMH11FHA
(SC-107C)
(4)
(5)
UMH11N
UMH11NFHA
SOT-353 (SC-88)
lFeatures
1) Built-In Biasing Resistors, R
1
= R
2
= 10kW.
2) Two DTC114E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
(6)
(3)
(2)
(1)
IMH11A
IMH11AFRA
SOT-457 (SC-74)
lInner
circuit
EMH11
UMH11NFHA
EMH11FHA /
/ UMH11N
OUT
(6)
IN
(5)
GND
(4)
OUT
(4)
IMH11AFRA
IMH11A
IN
(5)
GND
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
lPackaging
specifications
Part No.
EMH11
EMH11FHA
UMH11N
UMH11NFHA
IMH11A
IMH11AFRA
Package
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
180
180
8
8
8
8,000
3,000
3,000
Marking
H11
H11
H11
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
2012.06 - Rev.B
EMH11FHA / UMH11NFHA /
EMH11 / UMH11N / IMH11A
IMH11AFRA
lAbsolute
maximum ratings
(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
EMH11FHA UMH11NFHA
EMH11 /
/
UMH11N
Data Sheet
Symbol
V
CC
V
IN
I
O
I
C(MAX.)*1
IMH11A
IMH11AFRA
P
D
*2
Values
50
-10
to
+40
50
100
150 (Total)
300 (Total)
150
-55
to
+150
*3
*4
Unit
V
V
mA
mA
mW
mW
°C
°C
Junction temperature
Range of storage temperature
lElectrical
characteristics(Ta
= 25°C)
<For Tr1 and Tr2 in common>
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
*1
T
j
T
stg
Conditions
V
CC
= 5V, I
O
= 100mA
V
O
= 0.3V, I
O
= 10mA
I
O
/ I
I
= 10mA / 0.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
-
-
V
CE
= 10V, I
E
=
-5mA,
f = 100MHz
Min.
-
3.0
-
-
-
30
7
0.8
-
Typ.
-
-
0.1
-
-
-
10
1
250
Max.
0.5
-
0.3
0.88
0.5
-
13
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
2012.06 - Rev.B
EMH11FHA / UMH11NFHA /
EMH11 / UMH11N / IMH11A IMH11AFRA
lElectrical
characteristic curves
(Ta = 25°C)
Data Sheet
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : I
O
[A]
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
50
I
I
= 260μA
240μA
220μA
200μA
Fig.4 DC current gain vs. output current
OUTPUT CURRENT : I
O
[mA]
40
30
180μA
160μA
20
140μA
120μA
10
Ta=25ºC
100μA
0A
0
0
5
10
DC CURRENT GAIN : G
I
OUTPUT VOLTAGE : V
O
[V]
OUTPUT CURRENT : I
O
[A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/7
2012.06 - Rev.B
EMH11FHA / UMH11NFHA /
EMH11 / UMH11N / IMH11A IMH11AFRA
lElectrical
characteristic curves
(Ta = 25°C)
Data Sheet
Fig.5 Output voltage vs. output current
OUTPUT VOLTAGE : V
O(on)
[V]
OUTPUT CURRENT : I
O
[A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
4/7
2012.06 - Rev.B
EMH11FHA / UMH11NFHA /
EMH11 / UMH11N / IMH11A
IMH11AFRA
lDimensions
(Unit : mm)
Data Sheet
EMT6
Patterm of terminal position areas
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
5/7
2012.06 - Rev.B
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