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HN3C51FBL(TE85L)

产品描述HN3C51FBL(TE85L)
产品类别分立半导体    晶体管   
文件大小289KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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HN3C51FBL(TE85L)概述

HN3C51FBL(TE85L)

HN3C51FBL(TE85L)规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknown
Base Number Matches1

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HN3C51F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN3C51F
Audio Frequency General Purpose Amplifier Applications
High voltage : V
CEO
= 120V
High h
FE
: h
FE
= 200~700
Excellent h
FE
linearity
: h
FE
(I
C
= 0.1mA) / h
FE
(I
C
= 2mA) = 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
120
120
5
100
20
300
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3N1B
reliability significantly even if the operating conditions (i.e.
Weight: 0.015g (Typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating. Power dissipation per element should not exceed 200mW.
1.COLLECTOR1
2.EMITTER1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.BASE1
(C1)
(E1)
(C2)
(E2)
(B2)
(B1)
Electrical Characteristics
(Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
h
FE
V
CE
f
T
C
ob
NF
Test
Circuit
Test Condition
V
CB
= 120V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 6V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
=
6 V, I
C
=
0.1 mA
f
=
1 kHz, R
G
=
10 kΩ
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
V
MHz
pF
dB
Unit
μA
μA
Note: h
FE
Classification GR(G): 200~400, BL (L): 350~700 (
) Marking Symbol.
Marking
Type Name
hFE Rank
Equivalent Circuit
(Top View)
6
Q1
5
4
DG
Q2
1
2
3
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