HS56021
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1670-0200
Rev.2.00
Apr 24, 2008
Features
•
Low on-resistance
•
Low drive current
•
High density mounting
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
D
G
1. Gate
2. Drain
3. Source
32
S
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
Pch
θ
ch-a
Tch
Tstg
Ratings
600
±30
0.2
0.8
0.2
0.8
0.9
139
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1670-0200 Rev.2.00 Apr 24, 2008
Page 1 of 6
HS56021
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
13
84
11
2
31
14
53
173
4.5
0.6
2.6
0.77
150
Max
—
1
±0.1
5
15
—
—
—
—
—
—
—
—
—
—
1.25
—
Unit
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 0.1 A, V
GS
= 10 V
Note2
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 0.1 A
V
GS
= 10 V
R
L
= 3000
Ω
Rg = 10
Ω
V
DD
= 480 V
V
GS
= 10 V
I
D
= 0.2 A
I
F
= 0.2 A, V
GS
= 0
Note2
I
F
= 0.2 A, V
GS
= 0
di
F
/dt = 100 A/µs
Notes: 2. Pulse test
3. Since this device is equipped with high voltage FET chip (V
DSS
≥
600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
REJ03G1670-0200 Rev.2.00 Apr 24, 2008
Page 2 of 6
HS56021
Main Characteristics
Power vs. Temperature Derating
1.6
10
3
1
0.3
0.1
0.03
0.01
µ
s
PW
=1
(1s
10
ho 0 m
0
µ
t)
s
DC
s
Op
era
tio
1 ms
n
area is limited by
Maximum Safe Operation Area
Pch (W)
I
D
(A)
1.2
10
Channel Dissipation
0.8
Drain Current
0.4
0.003
Operation in this
0.001
R
DS(on)
Ta = 25°C
1
3
10
0.0003
0.0001
0
50
100
150
200
30
100
300
1000
Ambient Temperature
Ta (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
1.0
Pulse Test
8V
6V
5.8 V
5.6 V
1
0.5
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
10 V
I
D
(A)
Drain Current
0.8
0.2
0.1
0.05
0.02
0.01
0.005
0.002
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
0.001
0.6
Drain Current
0.4
5.4 V
5.2 V
0.2
V
GS
= 5 V
0
4
8
12
16
20
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
100
V
GS
= 10 V
50
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
V
GS
= 10 V
Pulse Test
40
0.2 A
I
D
= 0.4 A
20
10
5
30
20
0.1 A
10
0
−25
2
1
0.01 0.03
Pulse Test
0.1
0.3
1
3
10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
REJ03G1670-0200 Rev.2.00 Apr 24, 2008
Page 3 of 6
HS56021
Body-Drain Diode Reverse
Recovery Time
1000
1000
300
V
GS
= 0
f = 1 MHz
Ciss
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
2
1
0.1
0.3
1
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
3
10
30
100
Capacitance C (pF)
100
30
10
3
Coss
Crss
1
0.3
0.1
0
100
200
300
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
800
V
DD
= 100 V
300 V
480 V
600
V
DS
400
V
GS
8
I
D
= 0.2 A
12
16
1.0
Reverse Drain Current vs.
Source to Drain Voltage
I
DR
(A)
Pulse Test
0.8
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
0.6
0.4
0.2
200
V
DD
= 480 V
300 V
100 V
2
4
6
8
4
5, 10 V
V
GS
= 0, -5 V
0
0
10
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nC)
Source to Drain Voltage
V
SD
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
I
D
= 10 mA
4
1 mA
3
0.1 mA
2
Gate to Source Cutoff Voltage
V
GS(off)
(V)
1
0
-25
V
DS
= 10 V
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
REJ03G1670-0200 Rev.2.00 Apr 24, 2008
Page 4 of 6
HS56021
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
ulse
ot p
1sh
θch
– a (t) =
γ
s (t) •
θch
– a
θch
– a = 139°C/W, Ta = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
100
1000
10000
D=
PW
T
0.01
10
µ
100
µ
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1670-0200 Rev.2.00 Apr 24, 2008
Page 5 of 6
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
