HRV103B
Silicon Schottky Barrier Diode for Rectifying
REJ03G0399-0300
Rev.3.00
Mar 25, 2008
Features
•
Low reverse current and suitable for high efficiency rectifying.
•
Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Part No.
HRV103B
Laser Mark
S2
Package Name
TURP
Package Code
PUSF0002ZC-A
Pin Arrangement
Cathode mark
Mark
1
S2
2
1. Cathode
2. Anode
REJ03G0399-0300 Rev.3.00 Mar 25, 2008
Page 1 of 5
HRV103B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Repetitive peak reverse voltage
Reverse voltage
Average rectified current
Non-Repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RRM
V
R
I
O
*
2
I
FSM
*
1
Tj
Tstg
Value
30
30
1
5
150
–55 to +150
Unit
V
V
A
A
°C
°C
Notes: 1. 10 ms sine wave 1 pulse
2. Ta = 48°C, With Ceramics board (board size: 50 mm
×
50 mm, Land size 2 mm
×
2 mm)
Short form wave (θ180°C), V
R
= 15 V.
Electrical Characteristics
(Ta = 25°C)
Item
Forward voltage
Symbol
V
F1
V
F2
V
F3
I
R1
I
R2
C
Rth(j-a)
Min
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
100
200
Max
0.35
0.45
0.50
10
100
40
—
—
Unit
V
Test Condition
I
F
= 100 mA
I
F
= 700 mA
I
F
= 1 A
V
R
= 5 V
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
Ceramics board *
1
Glass epoxy board *
2
Reverse current
Capacitance
Thermal resistance
μA
pF
°C/W
Notes: 1. Ceramics board
2.0
0.5
2.0
0.3
2.0
50h
×
50w
×
0.8t
Unit: mm
1.0
2. Glass epoxy board
6.0
0.5
6.0
0.3
2.0
50h
×
50w
×
0.8t
Unit: mm
1.0
3. TURP is the structure which radiates heat to a substrate, please perform mounting to a substrate by reflow.
REJ03G0399-0300 Rev.3.00 Mar 25, 2008
Page 2 of 5
HRV103B
Main Characteristics
1.0
Ta = 75°C
10
–2
Pulse test
10
–3
Reverse current I
R
(A)
Ta = 75°C
Pulse test
10
–1
Ta = 25°C
Forward current I
F
(A)
10
–2
10
–4
10
–3
10
–5
10
–4
Ta = 25°C
10
–5
10
–6
10
–6
0
0.2
0.4
0.6
0.8
Forward voltage V
F
(V)
1.0
10
–7
0
10
20
30
Reverse voltage V
R
(V)
40
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f=1MHz
Pulse test
100
Capacitance C (pF)
10
1.0
0.1
1.0
Reverse voltage V
R
(V)
10
Fig.3 Capacitance vs. Reverse voltage
REJ03G0399-0300 Rev.3.00 Mar 25, 2008
Page 3 of 5
HRV103B
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
D=1/6
D=1/3
4.0
0V
D=5/6
t
T
t
D=—
T
Forward power dissipation Pd (W)
T
Ta= 25°C
t
D=—
T
Sin
Reverse power dissipation Pd (W)
0A
t
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Tj = 150°C
D=2/3
D=1/2
DC
D=1/2
Sin
0.5
1.0
Forward current I
F
(A)
1.5
0
10
20
30
Reverse voltage V
R
(V)
40
Fig.4 Forward power dissipation vs. Forward current
Fig.5 Reverse power dissipation vs. Reverse voltage
1.2
1.0
Average rectified current I
O
(A)
V
R
= V
RRM
/2
Tj = 150°C
Rth(j-a) = 100°C/W
DC
0.8
Sin(θ=180
°)
0.6
D=1/3
0.4
D=1/6
0.2
D=1/2
0
–25
0
25 50 75 100 125 150
Ambient temperature Ta (
°C
)
Fig.6 Average rectified current vs. Ambient temperature
REJ03G0399-0300 Rev.3.00 Mar 25, 2008
Page 4 of 5
HRV103B
Package Dimensions
Package Name
TURP
JEITA Package Code
⎯
RENESAS Code
PUSF0002ZC-A
Previous Code
TURP/TURPV
MASS[Typ.]
0.004g
D
b
b
Lp
1
E
H
E
Lp
2
c
b
1
b
2
Reference
Symbol
Dimension in Millimeters
b
1
Min
0.55
0.75
0.08
1.15
1.80
2.40
0.40
1.30
Nom
0.60
0.80
0.13
1.25
1.90
2.50
0.50
1.40
0.8
1.1
0.5
0.8
2.0
l
1
A
e
1
l
2
b
3
Pattern of terminal position areas
A
b
b
1
c
D
E
H
E
Lp
1
Lp
2
b
2
b
3
e
1
l
1
l
2
Max
0.55
0.65
0.85
0.18
1.45
2.00
2.60
0.60
1.50
REJ03G0399-0300 Rev.3.00 Mar 25, 2008
Page 5 of 5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
