RJK2511DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1486-0400
Rev.4.00
Nov 27, 2007
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
250
±30
65
200
65
200
22
30.2
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 1 of 6
RJK2511DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Q
rr
Min
250
—
—
3.0
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
51
0.028
4900
690
85
52
200
160
150
120
28
51
0.93
200
1.5
Max
—
1
±0.1
4.5
—
0.034
—
—
—
—
—
—
—
—
—
—
1.50
—
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 250 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 32.5 A, V
DS
= 10 V
Note4
I
D
= 32.5 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 32.5 A
V
GS
= 10 V
R
L
= 3.9
Ω
Rg = 10
Ω
V
DD
= 200 V
V
GS
= 10 V
I
D
= 65 A
I
F
= 65 A, V
GS
= 0
Note4
I
F
= 65 A, V
GS
= 0
di
F
/dt = 100 A/µs
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 2 of 6
RJK2511DPK
Main Characteristics
Power vs. Temperature Derating
400
Maximum Safe Operation Area
1000
300
Ta = 25°C
1m
s
Channel Dissipation Pch (W)
300
Drain Current I
D
(A)
100
30
10
3
1
0.3
10
µ
s
10
0
µ
s
200
PW = 10 ms
(1shot)
DC Operation
(Tc = 25°C)
100
0
50
100
150
200
0.1
Operation in this
0.03
area is limited by
R
DS(on)
0.01
1
3
10
30
100
300
1000
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V
8V
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
6.3 V
Drain Current I
D
(A)
5.9 V
60
5.5 V
Pulse Test
20
5V
Drain Current I
D
(A)
80
80
60
40
40
20
Tc = 75°C
V
GS
= 0 V
0
4
8
12
16
20
0
2
4
25°C
−25°C
6
8
10
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source on State Resistance
R
DS(on)
(Ω)
Drain to Source Saturation Voltage
V
DS(on)
(V)
4
Pulse Test
3
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
0.05
V
GS
= 10 V
0.02
0.01
0.005
2
I
D
= 65 A
1
32.5 A
10 A
0.002
0.001
1
3
10
30
Pulse Test
100
300
1000
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 3 of 6
RJK2511DPK
Static Drain to Source on State Resistance
vs. Temperature
0.1
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V
GS
= 10 V
100
30
10
3
75°C
1
0.3
0.1
0.1
Tc =
−25°C
25°C
Pulse Test
I
D
= 65 A
32.5 A
0.08
0.06
0.04
10 A
0.02
0
−25
V
DS
= 10 V
Pulse Test
0.3
1
3
10
30
100
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
100000
30000
V
GS
= 0
f = 1 MHz
Body-Drain Diode Reverse
Recovery Time
1000
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
2
1
0.1
0.3
1.0
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
3
10
30
100
Capacitance C (pF)
10000
3000
1000
300
100
30
10
0
50
100
150
Crss
Coss
Ciss
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 65 A
300
V
DD
= 200 V
100 V
50 V
V
DS
V
GS
12
Gate to Source Voltage V
GS
(V)
400
16
10000
Switching Time t (ns)
V
GS
= 10 V, V
DD
= 125 V
PW = 5
µs,
duty
≤
1 %
R
G
= 10
Ω
tf
td(off)
tr
tf
td(off)
1000
200
8
100
V
DD
= 200 V
100 V
50 V
40
80
120
160
4
100 t
d(on)
tr
10
0.1
0
0
200
0.3
1
3
10
30
100
Gate Charge Qg (nC)
Drain Current I
D
(A)
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 4 of 6
RJK2511DPK
Reverse Drain Current vs.
Source to Drain Voltage
100
5
Gate to Source Cutoff Voltage
vs. Case Temperature
V
DS
= 10 V
I
D
= 10 mA
4
1 mA
3
Reverse Drain Current I
DR
(A)
80
60
Gate to Source Cutoff Voltage
V
GS(off)
(V)
40
10 V
V
GS
= 0 V
5V
Pulse Test
2
0.1 mA
1
0
-25
20
0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ
ch – c (t) =
γ
s (t) •
θ
ch – c
0.1
θ
ch – c = 0.625
°
C/W, Tc = 25
°
C
P
DM
u
tp
lse
0.05
D=
PW
T
0.03
0.02
1
0.0
1s
ho
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 125V
90%
90%
td(off)
tf
Vin
Vout
10%
10%
10%
Vout
Monitor
Waveform
90%
td(on)
tr
REJ03G1486-0400 Rev.4.00 Nov 27, 2007
Page 5 of 6
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