RJK6020DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1465-0200
Rev.2.00
Sep 21, 2006
Features
•
Low on-resistance
•
Low leakage current
•
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
G
1. Gate
2. Drain (Flange)
3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Note2
Pch
θch-c
Tch
Tstg
Ratings
600
±30
32
96
32
96
8.5
3.9
200
0.625
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.2.00 Sep 21, 2006 page 1 of 6
RJK6020DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
600
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.155
5150
480
52
55
100
176
100
121
28
50
0.88
520
Max
—
1
±0.1
4.5
0.175
—
—
—
—
—
—
—
—
—
—
1.50
—
Unit
V
µA
µA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 600 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 16 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 16 A
V
GS
= 10 V
R
L
= 18.8
Ω
Rg = 10
Ω
V
DD
= 480 V
V
GS
= 10 V
I
D
= 32 A
I
F
= 32 A, V
GS
= 0
Note4
I
F
= 32 A, V
GS
= 0
di
F
/dt = 100 A/µs
Rev.2.00 Sep 21, 2006 page 2 of 6
RJK6020DPK
Main Characteristics
Power vs. Temperature Derating
400
1000
100
1m
s
10
Maximum Safe Operation Area
Pch (W)
I
D
(A)
300
10
0
µ
µ
s
s
10
1
0.1
DC Operation
(Tc = 25°C)
PW = 10 ms
(1shot)
Channel Dissipation
200
Drain Current
100
Operation in this
area is limited by
0.01
R
DS(on)
0
50
100
150
200
0.001
0.1
Ta = 25°C
1
10
100
1000
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
6V
5.8 V
8 V, 10V
5.6 V
100
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
40
20
10
5
2
1
0.5
0.2
0.1
Tc = 75°C
25°C
−25°C
0
2
4
6
8
10
30
Drain Current
5.4 V
20
5.2 V
10
Pulse Test
0
4
8
12
16
20
V
GS
= 5 V
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
V
GS
= 10 V
0.5
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.5
V
GS
= 10 V
0.4
16 A
0.3
I
D
= 32 A
10 A
0.2
0.1
0.05
0.2
0.1
Pulse Test
0
−25
0
25
50
75
100 125 150
0.02
0.01
1
3
10
30
Pulse Test
100
300
1000
Drain Current
I
D
(A)
Case Temperature
Tc (°C)
Rev.2.00 Sep 21, 2006 page 3 of 6
RJK6020DPK
Body-Drain Diode Reverse
Recovery Time
1000
100000
30000
V
GS
= 0
f = 1 MHz
Ciss
Typical Capacitance vs.
Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
200
100
50
20
10
5
2
1
1
3
10
30
100
300
1000
di / dt = 100 A /
µs
V
GS
= 0, Ta = 25°C
Capacitance C (pF)
10000
3000
1000
300
100
30
10
0
100
Coss
Crss
200
300
Reverse Drain Current
I
DR
(A)
Drain to Source Voltage
V
DS
(V)
Dynamic Input Characteristics
V
DS
(V)
V
GS
(V)
800
Reverse Drain Current vs.
Source to Drain Voltage
16
50
600
V
DS
400
Drain to Source Voltage
Gate to Source Voltage
Reverse Drain Current
V
DD
= 100 V
300 V
480 V
I
DR
(A)
I
D
= 32 A
V
GS
Pulse Test
40
12
30
8
20
10
200
V
DD
= 480 V
300 V
100 V
40
80
120
160
4
5, 10 V
V
GS
= 0, -5 V
0.8
1.2
1.6
2.0
0
0
200
0
0.4
Gate Charge
Qg (nC)
Source to Drain Voltage
V
SD
(V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
V
DS
= 10 V
4
I
D
= 10 mA
1 mA
3
0.1 mA
Gate to Source Cutoff Voltage
V
GS(off)
(V)
2
1
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
Rev.2.00 Sep 21, 2006 page 4 of 6
RJK6020DPK
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 0.625°C/W, Tc = 25°C
P
DM
D=
PW
T
1m
10 m
100 m
1
10
PW
T
0.05
0.03
0.02
1
0.0
0.01
10
µ
ho
1s
uls
tp
e
100
µ
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 300 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
Rev.2.00 Sep 21, 2006 page 5 of 6
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