RJK0316DSP
Silicon N Channel Power MOS FET
Power Switching
REJ03G1598-0300
Rev.3.00
Oct 16, 2007
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 5.3 m
Ω
typ. (at V
GS
= 10 V)
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
87
65
5 6 7 8
D D D D
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
3
12
4
4
G
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-a
Note3
Tch
Tstg
Note1
Ratings
30
+16/–12
16
128
16
16
25.6
2.0
62.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
REJ03G1598-0300 Rev.3.00 Oct 16, 2007
Page 1 of 7
RJK0316DSP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
5.3
7.2
40
2080
650
100
1.4
13.8
5.3
2.9
6.5
5.0
45
4.0
0.81
30
Max
—
± 0.1
1
2.5
6.4
9.4
—
—
—
—
—
—
—
—
—
—
—
—
1.06
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= +16/-12 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 8 A, V
GS
= 10 V
Note4
I
D
= 8 A, V
GS
= 4.5 V
Note4
I
D
= 8 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 16 A
V
GS
= 10 V, I
D
= 8 A
V
DD
≅
10 V
R
L
= 1.25
Ω
Rg = 4.7
Ω
IF = 16 A, V
GS
= 0
Note4
IF = 16 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
REJ03G1598-0300 Rev.3.00 Oct 16, 2007
Page 2 of 7
RJK0316DSP
Main Characteristics
Power vs. Temperature Derating
4.0
500
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW
≤
10 s
10
µs
Maximum Safe Operation Area
Channel Dissipation Pch (W)
100
Drain Current I
D
(A)
3.0
PW
1m
10
10
DC
=1
s
0
µ
s
Op
0m
s
2.0
era
tio
1
Operation in
this area is
limited by R
DS(on)
n(
PW
≤
1
Note
0s
5
)
1.0
0.1
0.01
0.1
Ta = 25 °C
1 shot Pulse
0
50
100
150
200
0.3
1
3
10
30
100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 5 : When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10 V
50
3.0 V
Typical Transfer Characteristics
V DS = 10 V
Pulse Test
Drain Current I
D
(A)
7V
Drain Current I
D
(A)
40
2.8 V
40
30
2.6 V
20
30
25°C
Tc = 75°C
10
–25°C
20
10
V
GS
= 2.4 V
Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
Pulse Test
50
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Voltage V
DS(on)
(mV)
200
Pulse Test
160
20
10 V
GS
= 4.5 V
5
10 V
2
1
1
3
10
30
100
300
1000
120
80
I
D
= 10 A
40
5A
2A
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1598-0300 Rev.3.00 Oct 16, 2007
Page 3 of 7
RJK0316DSP
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Drain to Source On State Resistance
R
DS(on)
(mΩ)
12
Pulse Test
10
8 V
GS
= 4.5 V
5 A, 10 A
20 A
Forward Transfer Admittance |yfs| (S)
1000
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
V
DS
= 10 V
Pulse Test
10
30
100
25°C
75°C
Tc = –25°C
6
I
D
= 5 A, 10 A, 20 A
4
2
–25
10 V
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
Ciss
Body Drain Diode Reverse
Recovery Time
100
Reverse Recovery Time trr (ns)
50
Capacitance C (pF)
1000
Coss
300
100
30
10
0
Crss
20
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
0.3
1
3
10
30
100
10
0.1
V
GS
= 0
f = 1 MHz
5
10
15
20
25
30
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
20
1000
Drain to Source Voltage V
DS
(V)
50
Gate to Source Voltage V
GS
(V)
I
D
= 16 A
V
GS
30
V
DS
V
DD
= 25 V
10 V
5V
12
Switching Time t (ns)
40
16
300
100
30
tf
10
3
1
0.1
td(on)
tr
td(off)
20
8
10
V
DD
= 25 V
10 V
5V
10
20
30
40
4
0
50
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
0.3
1
3
10
30
100
0
Gate Charge Qg (nc)
Drain Current I
D
(A)
REJ03G1598-0300 Rev.3.00 Oct 16, 2007
Page 4 of 7
RJK0316DSP
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E
AR
(mJ)
50
50
I
AP
= 16 A
V
DD
= 15 V
duty < 0.1 %
Rg > 50
Ω
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current I
DR
(A)
10 V
40
5V
40
30
V
GS
= –5, 0 V
30
20
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
10
0
25
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γs
(t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
θch
- f(t) =
γs
(t) x
θch
- f
θch
- f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
lse
PDM
PW
T
0.001
1
u
tp
sho
D=
PW
T
0.0001
10
µ
100
µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Avalanche Test Circuit
L
I
AP
Monitor
Rg
Vin
15 V
D. U. T
V
DD
I
AP
V
DS
I
D
50
Ω
V
DD
Avalanche Waveform
E
AR
=
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
V
DS
Monitor
0
REJ03G1598-0300 Rev.3.00 Oct 16, 2007
Page 5 of 7
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