Silicon N Channel MOS FET High Speed Power Switching
| 2SK2735 | 2SK2735L | 2SK2735L-E | 2SK2735S | |
|---|---|---|---|---|
| 描述 | Silicon N Channel MOS FET High Speed Power Switching | Silicon N Channel MOS FET High Speed Power Switching | Silicon N Channel MOS FET High Speed Power Switching | Silicon N Channel MOS FET High Speed Power Switching |
| 包装说明 | - | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | DPAK-3 |
| 针数 | - | 3 | 4 | 3 |
| Reach Compliance Code | - | compli | compli | compli |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 |
| 外壳连接 | - | DRAIN | DRAIN | DRAIN |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 30 V | 30 V | 30 V |
| 最大漏极电流 (Abs) (ID) | - | 20 A | 20 A | 20 A |
| 最大漏极电流 (ID) | - | 20 A | 20 A | 20 A |
| 最大漏源导通电阻 | - | 0.05 Ω | 0.05 Ω | 0.05 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | - | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 |
| 元件数量 | - | 1 | 1 | 1 |
| 端子数量 | - | 3 | 3 | 2 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | IN-LINE | IN-LINE | SMALL OUTLINE |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 20 W | 20 W | 20 W |
| 最大脉冲漏极电流 (IDM) | - | 80 A | 80 A | 80 A |
| 认证状态 | - | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | NO | YES |
| 端子形式 | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | - | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON | SILICON |
| Base Number Matches | - | 1 | 1 | 1 |
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