Freescale Semiconductor
Technical Data
Document Number: MRF19090
Rev. 6, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class AB PCN and PCS base station applications with
frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and
multicarrier amplifier applications.
•
Typical CDMA Performance: 1990 MHz, 26 Volts
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9 Watts Avg.
Power Gain — 10 dB
Adjacent Channel Power —
885 kHz: - 47 dBc @ 30 kHz BW
1.25 MHz: - 55 dBc @ 12.5 kHz BW
2.25 MHz: - 55 dBc @ 1 MHz BW
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 90 Watts CW
Output Power
Features
•
Internally Matched for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF19090R3
MRF19090SR3
1930- 1990 MHz, 90 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF19090R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF19090SR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +65
- 0.5, +15
270
1.54
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.65
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF19090R3 MRF19090SR3
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Drain- Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
μA)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 750 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 90 W PEP, I
DQ
= 750 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 90 W CW, f = 1990 MHz)
1. Part is internally matched both on input and output.
G
ps
10
11.5
—
dB
C
rss
—
4.2
—
pF
g
fs
VGS
(th)
V
GS(Q)
V
DS(on)
—
2.0
2.5
—
7.2
—
3.8
0.10
—
4.0
4.5
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
η
33
35
—
%
IMD
—
- 30
- 28
dBc
IRL
—
- 12
—
dB
P1dB
—
90
—
W
MRF19090R3 MRF19090SR3
2
RF Device Data
Freescale Semiconductor
V
BIAS
+
B1
+
C13
+
C14
+
C19
C9
B3
B4
+
+
C16
+
C17
B2
V
SUPPLY
+
C10
C8
C7
C5
C6
C11
C12
C15
L1
R1
L2
RF
INPUT
Z1
Z2
C2
C1
Z3
Z4
Z5
DUT
Z6
Z7
C3
C4
Z8
Z9
RF
OUTPUT
R2
C18
B1, B2
B3, B34
C1, C18
C2, C5, C8
C3
C4
C6, C7
C9, C12
C10, C11
C13, C17
C14, C16
C15, C19
2 Ferrite Beads, Round, Ferroxcube #56- 590- 65- 3B
Ferrite Beads, Surface Mount, Ferroxcube
0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim #27285
10 pF Chip Capacitors, ATC #100B100CCA500X
12 pF Chip Capacitor, ATC #100B120CCA500X
0.3 pF Chip Capacitor, ATC #100B0R3CCA500X
120 pF Chip Capacitors, ATC #100B12R1CCA500X
0.1
μF
Chip Capacitors, Kemet #CDR33BX104AKWS
1000 pF Chip Capacitors, ATC #100B102JCA50X
22
μF,
35 V Tantalum Chip Capacitors,
Kemet #T491X226K035AS4394
10
μF,
35 V Tantalum Chip Capacitors,
Kemet #T495X106K035AS4394
1
μF,
35 V Tantalum Chip Capacitors,
Kemet #T495X105K035AS4394
8 Turns, #26 AWG, 0.085″ OD, 0.330″
Long, Copper Wire
R1, R2
270
Ω,
1/4 W Chip Resistors, Garrett
Instruments #RM73B2B271JT
Z1
ZO = 50 Ohms
Z2
ZO = 50 Ohms, Lambda = 0.123
Z3
ZO = 15.24 Ohms, Lambda = 0.0762
Z4
ZO = 10.11 Ohms, Lambda = 0.0392
Z5
ZO = 6.34 Ohms, Lambda = 0.0711
Z6
ZO = 5.02 Ohms, Lambda = 0.0476
Z7
ZO = 5.54 Ohms, Lambda = 0.0972
Z8
ZO = 50.0 Ohms, Lambda = 0.194
Z9
ZO = 50.0 Ohms
Raw PCB Material 0.030″ Glass Teflon
®
,
ε
r
= 2.55,
2 oz Copper, 3″ x 5″ Dimensions
L1, L2
Figure 1. MRF19090 Test Circuit Schematic
MRF19090R3 MRF19090SR3
RF Device Data
Freescale Semiconductor
3
C9
RFB1
C19
C13 C14
C10
RFB2
RFB3 C11 C12
RFB4
C7
C8
L2
L1
R1
C2
CUTOUT
R2
C3
C4
C6
C5
C15
C16 C17
C1
C18
0.14λ
0.212λ
MRF19090
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF19090 Test Circuit Component Layout
MRF19090R3 MRF19090SR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
40
η
35
IRL
30
25
20
IMD
15
G
ps
10
1900
1920
1960
1980
1940
f, FREQUENCY (MHz)
2000
−35
2020
−30
V
DD
= 26 Vdc
P
out
= 90 W (PEP)
I
DQ
= 750 mA
100 kHz Tone Spacing
−15
−10
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
35
V
DD
= 26 Vdc, I
DQ
= 1.1 A, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz
(12.5 kHz), 2.25 MHz (1 MHz)
885 kHz
2.25 MHz
20
1.25 MHz
15
η
9 Channel Forward
Pilot:0, Paging:1, Traffic:8−13,
Sync:32
G
ps
10
0
5
15
10
20
25
P
out
, OUTPUT POWER (WATTS (Avg.))
30
−80
35
−60
−30
ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
30
−40
−20
25
−50
−25
−70
Figure 3. Class AB Performance versus Frequency
Figure 4. CDMA Performance ACPR, Gain and
Drain Efficiency versus Output Power
−20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
550 mA
−35
−40
−45
950 mA
−50
−55
750 mA
V
DD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
−20
V
DD
= 26 Vdc
I
DQ
= 750 mA
f = 1960 MHz
100 kHz Tone Spacing
−30
−40
3rd Order
−50
5th Order
−60
7th Order
−70
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 5. Third Order Intermodulation Distortion
versus Output Power
Figure 6. Intermodulation Products
versus Output Power
13
12.5
G ps , POWER GAIN (dB)
12
750 mA
G ps , POWER GAIN (dB)
950 mA
12.5
P
out
= 90 W (PEP)
I
DQ
= 750 mA, f = 1960 MHz
100 kHz Tone Spacing
12
G
ps
11.5
IMD
11
−22
−24
−26
−28
−30
−32
−34
−36
11.5
11
550 mA
V
DD
= 26 Vdc
f = 1960 MHz
100 kHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
10.5
10
10.5
22
24
26
28
30
−38
32
V
DD
, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Third Order Intermodulation Distortion
and Gain versus Supply Voltage
MRF19090R3 MRF19090SR3
RF Device Data
Freescale Semiconductor
5
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