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70V639S12BFI8

产品描述CABGA-208, Reel
产品类别存储    存储   
文件大小466KB,共25页
制造商IDT (Integrated Device Technology)
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70V639S12BFI8概述

CABGA-208, Reel

70V639S12BFI8规格参数

参数名称属性值
Brand NameIntegrated Device Technology
是否无铅含铅
是否Rohs认证不符合
零件包装代码CABGA
包装说明TFBGA, BGA208,17X17,32
针数208
制造商包装代码BF208
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
最长访问时间12 ns
I/O 类型COMMON
JESD-30 代码S-PBGA-B208
JESD-609代码e0
长度15 mm
内存密度2359296 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端口数量2
端子数量208
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装等效代码BGA208,17X17,32
封装形状SQUARE
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源2.5/3.3,3.3 V
认证状态Not Qualified
座面最大高度1.2 mm
最大待机电流0.015 A
最小待机电流3.15 V
最大压摆率0.515 mA
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn63Pb37)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度15 mm
Base Number Matches1

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HIGH-SPEED 3.3V
128K x 18 ASYNCHRONOUS
DUAL-PORT STATIC RAM
Features
IDT70V639S
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V639 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0L
CE
1L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
128K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
16L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
16R
A
0R
OE
L
CE
0L
CE
1L
R/W
L
BUSY
L
SEM
L
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0R
CE
1R
R/W
R
BUSY
R
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5621 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
JUNE 2018
DSC-5621/8
1
©2018 Integrated Device Technology, Inc.

 
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