Power Field-Effect Transistor, TO-220FP, 3 PIN
参数名称 | 属性值 |
包装说明 | , |
Reach Compliance Code | compliant |
Base Number Matches | 1 |
IPA65R660CFDXKSA2 | IPD65R660CFD | IPD65R660CFDAT | IPD65R660CFDBT | |
---|---|---|---|---|
描述 | Power Field-Effect Transistor, TO-220FP, 3 PIN | Voltage References Ultra-High-Precision Ultra-Low-Noise | Power Field-Effect Transistor | Power Field-Effect Transistor |
包装说明 | , | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | compliant | not_compliant | compliant | compliant |
是否Rohs认证 | - | 符合 | 符合 | 符合 |
厂商名称 | - | Infineon(英飞凌) | Infineon(英飞凌) | Infineon(英飞凌) |
雪崩能效等级(Eas) | - | 115 mJ | 115 mJ | 115 mJ |
外壳连接 | - | DRAIN | DRAIN | DRAIN |
配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | - | 650 V | 650 V | 650 V |
最大漏极电流 (Abs) (ID) | - | 6 A | 6 A | 6 A |
最大漏极电流 (ID) | - | 6 A | 6 A | 6 A |
最大漏源导通电阻 | - | 0.66 Ω | 0.66 Ω | 0.66 Ω |
FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | - | TO-252 | TO-252 | TO-252 |
JESD-30 代码 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | - | 1 | 1 | 1 |
端子数量 | - | 2 | 2 | 2 |
工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | - | 150 °C | 150 °C | 150 °C |
最低工作温度 | - | -55 °C | -55 °C | -55 °C |
封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | - | 17 A | 17 A | 17 A |
表面贴装 | - | YES | YES | YES |
端子形式 | - | GULL WING | GULL WING | GULL WING |
端子位置 | - | SINGLE | SINGLE | SINGLE |
晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | - | SILICON | SILICON | SILICON |
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