SSM6J401TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J401TU
○
DC/DC Converter Application
○
High-Speed Switching Applications
•
•
2.1±0.1
unit: mm
1.7±0.1
4.0V drive
Low ON-resistance : R
DS(ON)
= 145mΩ (max) (@V
GS
=
−4
V)
: R
DS(ON)
= 73mΩ (max) (@V
GS
=
−10
V)
0.65 0.65
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
(Note1)
T
ch
T
stg
Rating
−30
±20
−2.5
−5.0
500
150
−55~150
Unit
V
V
A
mW
°C
°C
2
3
5
4
0.7±0.05
1, 2, 5, 6 : Drain
UF6
JEDEC
JEITA
TOSHIBA
3
4
: Gate
: Source
Note 1: Mounted on an FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
―
―
2-2T1D
Weight: 7.0 mg (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Symbol
V
(BR) DSS
V
(BR) DSX
I
DSS
I
GSS
V
th
|Y
fs
|
R
DS (ON)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
on
t
off
V
DSF
V
DS
=
−15V,
I
D
=
−2.5
A
V
GS
=
−10
V
V
DD
= −15
V, I
D
= −2.0
A
V
GS
=
0~−4 V, R
G
=
10
Ω
I
D
=
2.5 A, V
GS
=
0 V
(Note 2)
V
DS
= −15
V, V
GS
=
0 V, f
=
1 MHz
Test Condition
I
D
= −1
mA, V
GS
=
0 V
I
D
= −1
mA, V
GS
=
20 V
V
DS
= −30
V, V
GS
=
0 V
V
GS
= ±16
V, V
DS
=
0 V
V
DS
= −5
V, I
D
= −1
mA
V
DS
= −5
V, I
D
= −2.0
A
I
D
= −2.0
A, V
GS
= −10
V
I
D
= −1.5
A, V
GS
= −4
V
(Note 2)
(Note 2)
(Note 2)
Min
−30
−15
⎯
⎯
−1.2
3.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
6.2
53
85
730
110
90
16
12.8
3.2
33
27
0.8
Max
⎯
⎯
−10
±1
−2.6
⎯
73
145
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1.2
ns
V
nC
pF
Unit
V
μA
μA
V
S
mΩ
Note 2: Pulse test
1
2007-05-29
+0.06
0.16-0.05
+0.1
0.3-0.05
2.0±0.1
1.3±0.1
1
6
SSM6J401TU
Switching Time Test Circuit
(a) Test Circuit
0
−4
V
10
μs
OUT
V
DD
= −15
V
R
G
=
10
Ω
D.U.
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
Common Source
Ta
=
25°C
(b) V
IN
0V
10%
90%
IN
R
G
−4
V
V
DS (ON)
90%
10%
t
r
t
on
(c) V
OUT
V
DD
V
DD
t
f
t
off
Marking
6
5
4
Equivalent Circuit
(top view)
6
5
4
KPD
1
2
3
1
2
3
Notice on Usage
V
th
can be expressed as the voltage between gate and source when the low operating current value is I
D
= 1 mA for
this product. For normal switching operation, V
GS (on)
requires a higher voltage than V
th
and V
GS (off)
requires a lower
voltage than V
th.
(The relationship can be established as follows: V
GS (off)
< V
th
< V
GS (on).
)
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2007-05-29
SSM6J401TU
I
D
– V
DS
-5
- 10 V
- 4.0V
- 5.0 V
Common Source
Ta
=
25 °C
-10
Common Source
VDS
=
- 5 V
I
D
– V
GS
(A)
I
D
-3
I
D
Drain current
(A)
-4
- 3.0 V
-1
Drain current
-0.1
-2
-0.01
Ta
=
100 °C
−
25 °C
-1
VGS = - 2.5 V
-0.001
25 °C
0
0
-0.2
-0.4
-0.6
-0.8
-1
-0.0001
0
-1
-2
-3
-4
Drain–source voltage
V
DS
(V)
Gate–source voltage
V
GS
(V)
R
DS (ON)
– V
GS
300
ID
= −
2.0 A
Common Source
300
R
DS (ON)
– I
D
Common Source
Ta
=
25°C
Drain–source ON-resistance
R
DS (ON)
(mΩ)
200
Drain–source ON-resistance
R
DS (ON)
(mΩ)
200
100
Ta
=
100 °C
25 °C
100
- 4.0V
−
25 °C
0
0
-10
-20
0
0
VGS = - 10
Ｖ
-1
-2
-3
-4
-5
Gate–source voltage
V
GS
(V)
Drain current
I
D
(A)
R
DS (ON)
– Ta
300
-2.0
V
th
– Ta
Common Source
V
th
(V)
Common Source
VDS
=
- 5V
ID
=
- 1 mA
Drain–source ON-resistance
R
DS (ON)
(mΩ)
Gate threshold voltage
200
-1.0
- 1.5 A / - 4.0V
100
ID
=
- 2.0 A / VGS
=
- 10 V
0
−50
0
50
100
150
0
−50
0
50
100
150
Ambient temperature
Ta
(°C)
Ambient temperature
Ta
(°C)
3
2007-05-29
SSM6J401TU
I
DR
– V
DS
10
Common Source
Common Source
VGS
=
0 V
D
1
G
I
DR
|Y
fs
| – I
D
(S)
10
⎪Y
fs
⎪
Ta
=
25°C
3
Forward transfer admittance
Drain reverse current
I
DR
(A)
VDS
=
- 5 V
S
0.1
Ta =100 °C
25 °C
0.01
1
0.3
−25
°C
0.1
-0.01
0.001
-0.1
-1
-10
0
0.5
1.0
1.5
Drain current
I
D
(A)
Drain–source voltage
V
DS
(V)
C – V
DS
10000
t – I
D
1000
toff
Common Source
VDD
=
- 15 V
VGS
=
0
∼
- 4.0 V
Ta
=
25 °C
RG
=
10
Ω
(pF)
(ns)
3000
tf
100
1000
Ciss
300
C
Capacitance
Switching time
t
ton
10
tr
100
Common Source
Ta
=
25°C
f
=
1 MHz
VGS
=
0 V
-1
-10
Coss
Crss
30
10
-0.1
-100
1
-0.01
-0.1
-1
-10
Drain–source voltage
V
DS
(V)
Drain current
I
D
(A)
Dynamic Input Characteristic
-10
Common Source
(V)
ID
=
- 2.5A
-8
Ta
=
25°C
V
GS
Gate–source voltage
-6
VDS= -15V
-4
VDS= - 24V
-2
0
0
4
8
12
16
20
Total Gate Charge
Qg
(nC)
4
2007-05-29
SSM6J401TU
r
th
– t
w
1000
1000
Single Pulse
P
D
– T
a
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm2)
t
=
10 s
800
Transient thermal impedance r
th
(°C/W)
100
Drain power dissipation P
D
(mW)
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
600
DC
400
10
200
1
0.001
0.01
0.1
1
10
100
1000
0
-50
0
50
100
150
Pulse width
t
w
(s)
Ambient temperature
Ta
(°C)
5
2007-05-29
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