Important notice
Dear Customer,
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Nexperia.
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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© Nexperia B.V. (year). All rights reserved.
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Team Nexperia
PESDxL5UF; PESDxL5UV;
PESDxL5UY
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 02 — 8 January 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
five unidirectional signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD3V3L5UF
PESD5V0L5UF
PESD3V3L5UV
PESD5V0L5UV
PESD3V3L5UY
PESD5V0L5UY
SOT886
SOT886
SOT666
SOT666
SOT363
SOT363
JEITA
-
-
-
-
SC-88
SC-88
JEDEC
MO-252
MO-252
-
-
-
-
leadless ultra small
leadless ultra small
ultra small and flat lead
ultra small and flat lead
very small
very small
Package configuration
Type number
1.2 Features
I
I
I
I
ESD protection of up to five lines
Low diode capacitance
Max. peak pulse power: P
PP
= 25 W
Low clamping voltage: V
CL
= 12 V
I
I
I
I
Ultra low leakage current: I
RM
= 5 nA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 2.5 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
C
d
diode capacitance
PESD3V3L5UF
PESD3V3L5UV
PESD3V3L5UY
PESD5V0L5UF
PESD5V0L5UV
PESD5V0L5UY
f = 1 MHz; V
R
= 0 V
-
22
28
pF
-
-
3.3
V
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5.0
V
-
16
19
pF
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 5)
6
5
bottom view
4
1
2
3
1
2
3
006aaa159
Simplified outline
Symbol
PESD3V3L5UF; PESD5V0L5UF
6
5
4
PESD3V3L5UV; PESD5V0L5UV
1
2
3
4
5
6
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 5)
1
2
3
6
5
4
1
2
3
006aaa159
6
5
4
PESDXL5UF_V_Y_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2008
2 of 17
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
Pinning
…continued
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 5)
1
2
3
6
5
4
1
2
3
006aaa159
Table 3.
Pin
1
2
3
4
5
6
Simplified outline
Symbol
PESD3V3L5UY; PESD5V0L5UY
6
5
4
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD3V3L5UF
PESD5V0L5UF
PESD3V3L5UV
PESD5V0L5UV
PESD3V3L5UY
PESD5V0L5UY
SC-88
plastic surface-mounted package; 6 leads
SOT363
-
XSON6
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1.45
×
0.5 mm
plastic surface-mounted package; 6 leads
Version
SOT886
SOT666
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
A1
A2
E1
E2
K3*
K4*
Type number
PESD3V3L5UF
PESD5V0L5UF
PESD3V3L5UV
PESD5V0L5UV
PESD3V3L5UY
PESD5V0L5UY
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESDXL5UF_V_Y_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2008
3 of 17
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional fivefold ESD protection diode arrays
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
−65
−65
Max
25
2.5
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
[1][2]
Parameter
Conditions
Min
-
-
Max
20
10
Unit
kV
kV
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESDXL5UF_V_Y_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2008
4 of 17
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