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S29GL064M90TFIR6

产品描述Flash, 4MX16, 90ns, PDSO48, TSOP-48
产品类别存储    存储   
文件大小5MB,共156页
制造商Cypress(赛普拉斯)
标准
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S29GL064M90TFIR6概述

Flash, 4MX16, 90ns, PDSO48, TSOP-48

S29GL064M90TFIR6规格参数

参数名称属性值
是否Rohs认证符合
Objectid8204173235
包装说明TSSOP, TSSOP48,.8,20
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间90 ns
其他特性IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE
命令用户界面YES
通用闪存接口YES
数据轮询YES
JESD-30 代码R-PDSO-G48
JESD-609代码e3
长度18.4 mm
内存密度67108864 bit
内存集成电路类型FLASH
内存宽度16
湿度敏感等级3
功能数量1
部门数/规模128
端子数量48
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装等效代码TSSOP48,.8,20
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小4 words
并行/串行PARALLEL
峰值回流温度(摄氏度)260
电源3.3 V
编程电压3 V
认证状态Not Qualified
座面最大高度1.2 mm
部门规模32K
最大待机电流0.000005 A
最大压摆率0.06 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层MATTE TIN
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
切换位YES
类型NOR TYPE
宽度12 mm

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S29GLxxxM MirrorBit
TM
Flash Family
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
Datasheet
PRELIMINARY
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 um MirrorBit process
technology
SecSi™ (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— 256Mb: 512 32 Kword (64 Kbyte) sectors
— 128Mb: 256 32 Kword (64 Kbyte) sectors
— 64Mb (uniform sector modules): 128 32 Kword (64
Kbyte) sectors or 128 32 Kword sectors
— 64Mb (boot sector models): 127 32 Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
— 32Mb (uniform sector models): 64 32Kword (64
Kbyte) sectors of 64 32Kword sectors
— 32Mb (boot sector models): 63 32Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
100,000 erase cycles typical per sector
20-year data retention typical
— 16-word/32-byte write buffer reduces overall
programming time for multiple-word updates
Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current (64 Mb, 32 Mb)
— 25 mA typical active read current (256 Mb, 128 Mb)
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 40-pin TSOP
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
— 63-ball fine-pitch BGA
Software & Hardware Features
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
— Unlock Bypass Program command reduces overall
multiple-word programming time
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID
-level method of
charging code in locked sectors
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
erase cycle completion
Performance Characteristics
High performance
— 90 ns access time (128Mb, 64Mb, 32Mb),
100 ns access time (256Mb)
— 4-word/8-byte page read buffer
— 25 ns page read times (128Mb, 64Mb, 32Mb)
— 30 ns page read times (256Mb)
— 16-word/32-byte write buffer
Publication Number
S29GLxxxM_00
Revision
A
Amendment
3
Issue Date
February 26, 2004

 
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