Important notice
Dear Customer,
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Nexperia.
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Should be replaced with:
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© Nexperia B.V. (year). All rights reserved.
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PESD3V3L5UK; PESD5V0L5UK
Low capacitance unidirectional fivefold ESD protection diode
arrays
Rev. 1 — 25 August 2010
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode
arrays in a leadless ultra small SOT891 Surface-Mounted Device (SMD) plastic package
designed to protect up to five unidirectional signal lines from the damage caused by ESD
and other transients.
1.2 Features and benefits
ESD protection of up to five lines
Low diode capacitance
Max. peak pulse power: P
PP
= 30 W
Low clamping voltage: V
CL
= 9.5 V
AEC-Q101 qualified
Very low leakage current: I
RM
= 0.5
μA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 3.2 A
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3L5UK
PESD5V0L5UK
C
d
diode capacitance
PESD3V3L5UK
PESD5V0L5UK
f = 1 MHz; V
R
= 0 V
-
-
20
18.5
24
22
pF
pF
-
-
-
-
3.3
5.0
V
V
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
cathode (diode 5)
6
5
4
bottom view
1
2
3
1
2
3
006aaa159
Simplified outline
Graphic symbol
6
5
4
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD3V3L5UK
PESD5V0L5UK
-
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1
×
0.5 mm
Version
SOT891
Type number
4. Marking
Table 4.
Marking codes
Marking code
P4
P5
Type number
PESD3V3L5UK
PESD5V0L5UK
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
peak pulse power
PESD3V3L5UK
PESD5V0L5UK
I
PP
peak pulse current
PESD3V3L5UK
PESD5V0L5UK
t
p
= 8/20
μs
[1][2]
Parameter
Conditions
t
p
= 8/20
μs
[1][2]
Min
-
-
-
-
-
-
Max
Unit
28
30
3.2
3.1
W
W
A
A
PESD3V3L5UK_PESD5V0L5UK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 August 2010
2 of 15
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Non-repetitive current pulse 8/20
μs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
PESD3V3L5UK
PESD5V0L5UK
PESD3V3L5UK
PESD5V0L5UK
PESD3V3L5UK
PESD5V0L5UK
[1]
[2]
Parameter
Conditions
IEC 61000-4-2
(contact discharge)
[1][2]
Min
Max
Unit
-
-
machine model
MIL-STD-883 (human
body model)
[2]
15
20
400
8
kV
kV
V
kV
-
-
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4, 5 or 6 to pin 2.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESD3V3L5UK_PESD5V0L5UK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 August 2010
3 of 15
NXP Semiconductors
PESD3V3L5UK; PESD3V3L5UK
Low capacitance unidirectional fivefold ESD protection diode arrays
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
μs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
μs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (μs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
μs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD3V3L5UK_PESD5V0L5UK
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 25 August 2010
4 of 15
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