SMART
Features
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®
SM5320840UUXUUU
March 12, 1997
Modular Technologies
32MByte (8M x 32) DRAM Module - 4Mx4 based
72-pin SIMM
Part Numbers
SM53208400UXUUU
SM53208401UXUUU
SM53208408UXUUU
SM53208409UXUUU
Standard
:
JEDEC (5.0V FPM only)
Configuration
:
Non-parity
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
2K/4K
Device Physicals
:
300mil SOJ/TSOP
Lead Finish
:
Gold/Solder
Length x Height
:
4.250" x 1.000"
No. of sides
:
Single-sided
Mating Connector (Examples)
Horizontal
:
AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
:
AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
:
AMP-822110-3 (Tin) / 822097-3 (Gold)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Functional Diagram
CAS1#
CAS0#
RAS0#
4Mx8
Block
4Mx8
Block
4Mx8
Block
4Mx8
Block
CAS2#
CAS3#
RAS2#
RAS1#
4Mx8
Block
4Mx8
Block
4Mx8
Block
4Mx8
Block
RAS3#
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ0~DQ31
Notes : 1.
2.
3.
4.
A0~A10/A11 to all DRAMs (A11 is NC for 2K refresh module).
WE# to all DRAMs.
OE# of all DRAMs is grounded.
Each 4Mx8 Block comprises of two 4Mx4 DRAMs.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0~A10
A0~A11
A0~A9
DQ0~DQ31
RAS0#~RAS3#
CAS0#~CAS3#
WE#
PD1~PD4
V
CC
V
SS
NC
®
SM5320840UUXUUU
March 12, 1997
Modular Technologies
Pin
No.
Row and Column Addresses
for 2K Refresh Module
Row Addresses for 4K
Refresh Module
Column Addresses for 4K
Refresh Module
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ20
DQ5
DQ21
DQ6
DQ22
DQ7
DQ23
A7
A11 (Note)
V
CC
A8
A9
RAS3#
RAS2#
NC
NC
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
NC
NC
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
RAS1#
NC
WE#
NC
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
V
CC
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
60ns
70ns
80ns
NC
NC
NC
V
SS
V
SS
V
SS
NC
V
SS
NC
NC
NC
V
SS
Pin
PD1
PD2
PD3
PD4
Note : A11 is NC for 2K refresh module.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5320840UUXUUU
March 12, 1997
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
16
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
16
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%/5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS#, CAS#)
Input Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ31)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
90
38
122
24
Unit
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Vcc=3.3V
Typ
Max
3.3
3.6
0
-
-
0
V
CC
+0.3
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
2.4
-1.0
0
-
-
0
V
CC
+1.0
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5320840UUXUUU
March 12, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
60ns
70ns
80ns
Min Max Min Max Min Max
-160 160 -160 160 -160 160
-20
20
-20
20
-20
20
Unit
µ
A
µ
A
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
60ns
70ns
80ns
Min Max Min Max Min Max
-160 160 -160 160 -160 160
-20
20
-20
20
-20
20
Unit
µ
A
µ
A
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
FPM-based Modules
®
SM5320840UUXUUU
March 12, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
60ns
816
656
32
Max.
70ns
736
576
32
Unit
80ns
656
496
32
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
16
2K
4K
2K
4K
2K
4K
816
656
816
656
656
576
16
736
576
736
576
576
496
16
656
496
656
496
496
416
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
1, 3
1, 3
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
60ns
816
656
32
Max.
70ns
736
576
32
Unit
80ns
656
496
32
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
16
2K
4K
2K
4K
2K
4K
816
656
816
656
656
576
16
736
576
736
576
576
496
16
656
496
656
496
496
416
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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