PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
TYPE:
PH: (561)283-4500 FAX: (561)286-8914
Website:
http://www.semi -tech-inc.com
CASE OUTLINE: TO -247
NPN SILICON HIGH VOLTAGE POWER TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base
Collector to Emitter
Continuous Collector Current
Peak Collector Current
Power Dissipation TA = 25
°C
Power Dissipation TC = 25
°C
Storage Temperature
Operating Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25
°
C
PARAMETERS
SYMBOL
TEST CONDITIONS
Collector to Base Voltage
BVCBO
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
Saturation Voltage*
Saturation Voltage*
Saturation Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
BVEBO
BVCEO(sus)
BVCEO
BVCEV
ICBO
ICBO
ICER
ICEV
ICEV
I EBO
h FE
h FE
hFE
h FE
h FE
VCE(sat)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
I
C
= 5.0A, I
B
= 1.0A
I
C
= 10A, I
B
= 2.0A
I
C
= 10A, I
B
= 2.0A, T
C
= 100°C
I
C
= 10A, I
B
= 2.0A
I
C
= 10A, I
B
= 2.0A, T
C
= 100°C
I
C
= 100mA
MJW16010A
BVCBO
BVCEV
BVEBO
BVCEO(sus)
IC
ICM
PD
PD
Tstg
TJ
TL
Vdc
1000
6.0
500
15
20
135
-55 to +175
-55 to +175
275
Vdc
Vdc
Vdc
Adc
Adc
Watts
Watts
°C
°C
°C
MIN
TYP
MAX
UNIT
Vdc
Vdc
Vdc
Vdc
Vdc
mA
mA
mA
mA
mA
mA
-
-
-
-
-
500
V
CE
= 1000V, R
BE
= 50Ω, T
C
= 100°C
V
CEV
= 1000V, V
BE
= 1.5V
V
CEV
= 1000V, V
BE
= 1.5V, T
C
= 100°C
V
EB
= 6.0V
I
C
= 15A, V
CE
= 5.0V
1.0
.15
1.0
.15
5.0
0.7
1.0
1.5
1.5
1.5
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
VBE(on)
Notes: *Pulse Width
≤300usec
2% Duty Cycle
Page 1 of 2
PT-1 02/19/01
TYPE:
MJW16010A
SMALL SIGNAL CHARACTERISTICS
Current Gain at F =
Input Capacitance
Output Capacitance
V
CB
= 10V, f = 1.0 KHz
Transition Frequency
Input Impedance
Voltage Feedback Ratio
Output Admittance
Noise Figure
SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Inductive Load
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
Fall Time
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
Power Output
Collector Efficiency
Power Output
Second Breakdown Collector Current
Thermal-Resistance, Junction to Case
SYMBOL
GPE
Pout
η
Pout
IS/B
R
θJC
MIN
TYP
MAX
UNITS
dB
Watt
%
Watt
A
T
J
= 100°C
I
B2
= 2.6A
R
B2
= 1.6Ω
SYMBOL
t
d
t
r
t
s
t
f
ts
tf
SYMBOL
tsv
tc
tfi
tsv
T
J
= 150°C
tc
tfi
MIN
MIN
TYP
MAX
NF
SYMBOL
h fe
Cib
Cob
fT
MIN
TYP
MAX
UNITS
-
pf
400
pf
MHz
Ohms
X10-4
µmhos
dB
I
C
= 10A, V
CC
= 250V,
I
B1
= 1.3A,
PW = 30µs,
Duty Cycle
≤
2%
.10
.60
3.0
.40
700
80
TYP
UNITS
µs
µs
µs
µs
µs
µs
UNITS
µs
µs
µs
µs
µs
µs
V
BE(off)
= 5.0V
I
C
= 10A, I
B1
= 1.3A
V
BE
= 5.0V
V
CE(pk)
= 400V
MAX
2.0
.25
.30
.11
.12
.07
0.92
°C/W
Page 2 of 2
PT-1
02/19/01
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