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Datasheet> 器件分类 > 分立半导体> 晶体管> NDS8858H/L86Z

NDS8858H/L86Z: 产品描述6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET; 产品类别分立半导体晶体管; 文件大小249KB，共8页; 制造商Texas Instruments(德州仪器); 官网地址http://www.ti.com.cn/

敬请期待详细参数选型对比

NDS8858H/L86Z概述

6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET

NDS8858H/L86Z规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	30 V
最大漏极电流 (ID)	6.3 A
最大漏源导通电阻	0.035 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G8
元件数量	2
端子数量	8
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	N-CHANNEL AND P-CHANNEL
功耗环境最大值	2 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

NDS8858H/L86Z相似产品对比

	NDS8858H/L86Z	NDS8858H	NDS8858H/D84Z	NDS8858H/L99Z	NDS8858H/S62Z
描述	6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET	6300mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
包装说明	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
配置	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	30 V	30 V	30 V	30 V	30 V
最大漏极电流 (ID)	6.3 A	6.3 A	6.3 A	6.3 A	6.3 A
最大漏源导通电阻	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
元件数量	2	2	2	2	2
端子数量	8	8	8	8	8
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
功耗环境最大值	2 W	2 W	2 W	2 W	2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1

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