SFH636
High Speed 5.3 kV Optocoupler
FEATURES
• High Speed Optocoupler without Base
Connection
• GaAlAs Emitter
• Integrated Detector with Photodiode and
Transistor
• High Data Transmission Rate: 1.0 MBit/s
• TTL Compatible
• Open Collector Output
• CTR at
I
F
=16 mA,
V
O
=0.4 V,
V
CC
=4.5 V,
T
A
=25
°
C:
≥
19%
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable by TRIOS
(TRansparent IOn Shield)
• Low Coupling Capacitance
• dV/dt: typ. 10 kV/µs
• Isolation Test Voltage: 5300 V
RMS
• UL Approval, File #E52744
•
V
VDE #0884, Available with Option 1
D E
Dimensions in Inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
NC
3
4
Collector
2
1
pin one ID
Cathode
1
Anode
2
6
VCC
5
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
APPLICATIONS
• IGBT Drivers
• Data Communications
• Programmable Controllers
DESCRIPTION
The SFH636 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated pho-
todetector consisting of a photodiode and a high
speed transistor in a DIP-6 plastic package. The
device is functionally similar to 6N136 except there is
no base connection, and the electrical foot print is dif-
ferent. Noise and dv/dt performance is enhanced by
not bringing out the base connection.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages.
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage................................................................................ 3.0 V
DC Forward Current........................................................................ 25 mA
Surge Forward Current ..................................................................... 1.0 A
t
p
≤1.0 µs,
300 pulses/s
Total Power Dissipation.................................................................. 45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage....................................................................... –0.5 to 30 V
Output Voltage....................................................................... –0.5 to 20 V
Output Current ............................................................................... 8.0 mA
Total Power Dissipation................................................................ 100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector
(refer to climate DIN 40046, part 2, Nov. 74) ......................5300 V
RMS
Creepage....................................................................................
≥7.0
mm
Clearance ...................................................................................
≥7.0
mm
Isolation Resistance
V
IO
=500 V,
T
A
=25°C.................................................................
≥10
12
Ω
V
IO
=500 V,
T
A
=100
°
C...............................................................
≥
10
11
Ω
Storage Temperature Range ............................................. –55 to +150
°
C
Ambient Temperature Range............................................. –55 to +100
°
C
Junction Temperature ..................................................................... 100
°
C
Soldering Temperature (t=10 s max.)
Dip soldering: distance to seating plane
≥1.5
mm ..................... 260°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
February 24, 2000-22
Characteristics
(
T
A
=0
°
to 70
°
C, unless otherwise specified, typical values
T
A
=25
°
C)
Description
Emitter (IR GaAlAs)
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector (Si Photodiode + Transistor)
Supply Current, Logic High
I
CCH
—
—
Output Current, Output High
I
OH
—
—
—
Capacitance
Thermal Resistance
Package
Coupling Capacitance
Coupling Transfer Ratio
C
C
I
C
/
I
F
—
19
15
Collector Emitter Saturation Voltage
Supply Current, Logic Low
V
OL
I
CCL
—
—
0.6
30
—
0.1
80
—
—
—
0.4
—
V
µ
A
pF
%
—
I
F
=16 mA,
V
O
=0.4 V,
V
CC
=4.5 V,
T
A
=25
°
C
I
F
=16 mA,
V
O
=0.5 V,
V
CC
=4.5 V
I
F
=16 mA,
I
O
=2.4 mA,
V
CC
=4.5 V,
T
A
=25
°
C
I
F
=16 mA,
V
O
open,
V
CC
=15 V
C
CE
R
thJA
—
—
0.01
0.01
.003
.01
—
3.0
300
1.0
2.0
0.5
1.0
50
—
—
pF
°
K/W
µ
A
µ
A
I
F
=0,
V
O
(open),
V
CC
=15 V,
T
A
=25
°
C
I
F
=0,
V
O
(open),
V
CC
=15 V
I
F
=0,
V
O
(open),
V
CC
=5.5 V,
T
A
=25
°
C
I
F
=0,
V
O
(open),
V
CC
=15 V,
T
A
=25
°
C
I
F
=0,
V
O
(open),
V
CC
=15 V
V
CE
=5.0 V, f=1.0 MHz
—
V
F
I
R
C
0
R
thJA
—
—
—
—
1.5
0.5
125
700
1.8
10
—
—
V
µ
A
pF
°
K/W
I
F
=16 mA
V
R
=3.0 V
V
R
=0 V, f=1.0 MHz
—
Symbol
Min.
Typ.
Max.
Unit
Condition
Figure 1. Test Set-up
IF
C=100 nF
1
100
Ω
6
5
4
C L=15pF
Vcc
2
Pulse generator
Zo=50
Ω
tr,tf=5 ns
Duty cycle=10%
Period =100 µs
R
L
Vo
3
Figure 2. Switching Time Measurement
Vout
5V
Description
Propagation
Delay Time
(High-Low)
t
t
PHL
Sym. Min.
t
PHL
—
Typ.
0.3
Max.
0.8
Unit
µs
Condition
I
F
=16 mA,
V
CC
=5.0 V
R
L
=1.9 k
Ω
,
T
A
=25
°
C
1.5V
0
t
PLH
Propagation
Delay Time
(Low-Low)
t
PLH
—
I
F
16 mA
0
t
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH636
2
February 24, 2000-22
Figure 5. Output Characteristics–
Output Current vs. Output Voltage
T
A
=25°C,
V
CC
=5.0 V
Figure 8. Forward Current of Emitting
Diode vs. Forward Voltage
T
A
=25°C
10
2
Figure 11. Output Current (high)
vs. Ambient Temperature
V
O
=V
CC
=5.0 V,
I
F
=0
10
1
10
0
IF/mA
10
-1
10
-2
10
-3
1.1 1.2 1.3
VF/V
1.4
1.5
1.6
Figure 6. Permissible Forward
Current of Emitting Diode vs.
Ambient Temperature
Figure 9. Small Signal Transfer Ratio
vs. Forward Current
V
CC
=5.0 V,
T
A
=25°C
Figure 12. Delay Times vs. Ambient
Temperature
I
F
=16 mA,
V
CC
=5.0 V,
R
L
=4.1 kΩ, SFH6136:
R
L
=1.9 kΩ
Figure 7. Permissible Total Power
Dissipation vs. Ambient Temperature
Figure 10. Current Transfer Ratio (nor-
malized) vs. Ambient Temp.
I
F
=16 mA,
V
O
=0.4 V,
V
CC
=5.0 V,
T
A
=25°C
Figure 13. Current Transfer Ratio
(normalized) vs. Forward Current
I
F
=16 mA,
V
O
=0.4 V,
V
CC
=5.0 V,
T
A
=25°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH636
4
February 24, 2000-22
Figure 14. Forward Current of Emitting
Diode vs. Forward Voltage
T
A
=25°C
10
2
Figure 17. Output Current (high)
vs. Ambient Temperature
V
O
=V
CC
=5.0 V,
I
F
=0
10
1
10
0
IF/mA
10
-1
10
-2
10
-3
1.1 1.2 1.3
VF/V
1.4
1.5
1.6
Figure 15. Small Signal Transfer
Ratio vs. Forward Current
V
CC
=5.0 V,
T
A
=25°C
Figure 18. Delay Times vs. Ambient
Temperature
I
F
=16 mA,
V
CC
=5.0 V,
R
L
=4.1 kΩ, SFH6136:
R
L
=1.9 kΩ
Figure 16. Current Transfer Ratio
(normalized) vs. Ambient Temp.
I
F
=16 mA,
V
O
=0.4 V,
V
CC
=5.0 V,
T
A
=25°C
Figure 19. Current Transfer Ratio
(normalized) vs. Forward Current
I
F
=16 mA,
V
O
=0.4 V,
V
CC
=5.0 V,
T
A
=25°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
SFH636
5
February 24, 2000-22
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
