RT3YB7M
Composite Transistor
For Muting Application
DESCRIPTION
RT3YB7M
is
a
composite
transistor
built
with
RT1P140 and two muting transistor with resistor in
SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit:mm
FEATURE
・RT3YB7M
is built in RTr1 side RT1P140,and RTr2,RTr3 side
2.0
composite muting transistor with resistor.
・Built-in
bias resistor
RTr1:R1=10kΩ RTr2,RTr3:R1=10kΩ
・Mini
package for easy mounting
APPLICATION
muting circuit、switching circuit
0.65
0.13
0½0.1
0.9
0.65
⑥
RTr1
⑤
RTr2
④
RTr3
TERMINAL
CONNECTOR
①:BASE1
②:COLLECTOR1
BASE2,3
③:COLLECTOR2,3
④:EMITTER3
⑤:EMITTER2
⑥:EMITTER1
JEITA:SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
P
C
(Total)
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25
)
Junction temperature
Storage temperature
RTr1
RATING
-9
-50
-9
-100
150
+150
-55½+150
RTr2,RTr3
RATING
40
40
15
200
UNIT
V
V
V
mA
mW
℃
℃
MARKING
⑥ ⑤ ④
.
YB7
C99
① ② ③
ISAHAYA ELECTRONICS CORPORATION
RT3YB7M
Composite Transistor
For Muting Application
Electrical characteristics
Symbol
V
CBO
V
EBO
V
CEO
I
CBO
I
EBO
½
FE
R1
(Ta=25℃)(RTr1side)
Test conditions
I
C
=-50μA , I
E
=0mA
I
E
=-50μA , I
C
=0mA
I
C
=-1mA , R
BE
=∞
V
CB
=-6V , I
E
=0mA
V
EB
=-50V , I
C
=0mA
V
CE
=-5V , I
C
=-1mA
-
10
10
Limits
Min
-9
-50
-9
-0.1
-0.1
Typ
Max
Unit
V
V
V
μA
μA
-
KΩ
Parameter
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Input resistance
Electrical characteristics
(Ta=25℃)(RTr2,RTr3 common)
Symbol
V
CBO
V
EBO
V
CEO
I
CBO
I
EBO
½
FE
VCE(sat)
R1
fT
Ron
Parameter
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Output On-resistance
V
CE
=6V , I
E
=-10mA
V
IN
=3V, f=1MHz
Test conditions
I
C
=50μA , I
E
=0mA
I
E
=50μA , I
C
=0mA
I
C
=1mA , R
BE
=∞
V
CB
=40V , I
E
=0mA
V
EB
=40V , I
C
=0mA
V
CE
=5V , I
C
=10mA
I
C
=50mA , I
B
=5mA
-
10
55
2.0
820
Limits
Min
40
40
15
0.5
0.5
2500
100
Typ
Max
Unit
V
V
V
μA
μA
-
mV
KΩ
MHz
Ω
ISAHAYA ELECTRONICS CORPORATION
TYPICAL CHARACTERISTICS(RTr2,RTr3)
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
VCE=0.2V
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
VCE=5V
100
INPUT ON VOLTAGE VI(ON) (V)
1000
COLLECTOR CURRENT IC (uA)
10
Ta=-40℃
25℃
100
Ta=-40℃
25℃
75℃
1
75℃
0.1
0.1
1
10
100
1000
COLLECTOR CURRENT IC (mA)
10
0
0.2
0.4
0.6
0.8
1
INPUT OFF VOLTAGE VI(OFF) (V)
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
75℃
DC REVERSE CURRENT GAIN
VS. COLLECTOR CURRENT
10000
DC REVERSE CURRENT GAIN hFER
VCE=5V
VEC=5V
75℃
DC FORWARD CURRENT GAIN hFE
1000
25℃
1000
100
Ta=-40℃
100
25℃
Ta=-40℃
10
10
1
0.1
1
10
100
1000
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
1000
COLLECTOR CURRENT IC (mA)
COLLECTOR TO EMITTER SATURATION VOLTAGE
VS. COLLECTOR CURRENT
1000
COLLECTOR TO EMITTER
SATURATION VOLTAGE VCE(sat) (mV)
IC/IB=20
ON RESISTANCE Ron(Ω)
100
75℃
Ta=-40℃
ON RESISTANCE VS. INPUT VOLTAGE
100
f=1kHz
RL=1kΩ
10
25℃
75℃
10
25℃
Ta=-40℃
1
1
0.1
0.1
1
10
100
1000
COLLECTOR CURRENT IC (mA)
0.1
0.1
1
10
100
INPUT VOLTAGE VI(V)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jun.2008