ＲＴ１Ｎ４３０Ｘ SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N430X is a one chip transistor
with built-in bias resistor, PNP type is
RT1P430X.
0.4
OUTLINE
RT1N430U
1.6
0.8
0.4
DRAWING
RT1N430C
2.5
1.5
0.5
UNIT：mm
0.5
0.95
0.5
0.95
・Built-in bias resistor (R1=4.7kΩ)
1.6
1.0
2.9
1.90
①
②
③
0.3
FEATURE
①
②
③
APPLICATION
1.1
0.5
Equivalent circuit
C
(OUT)
R1
B
(IN)
JEITA：－
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
0½0.1
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：Base
②：Emitter
③：Collector
E
(GND)
RT1N430M
RT1N430S
4.0
0.425
2.1
1.25
0.425
RT1N430T
0.2
0.8
0.2
0½0.1
Inverted circuit, switching circuit, interface
circuit,
driver circuit.
0.7
0.55
0.15
0.8
0.16
0.4
0.65
1.0
2.0
1.3
0.4
0.1
0.45
1.2
0.8
①
②
③
0.3
①
②
③
14.0
0.65
1.0
1.27 1.27
0.9
0.4
0.7
0.15
①
②
③
JEITA：－
JEDEC：－
Terminal Connector
①：Emitter
②：Collector
③：Base
JEITA：SC-70
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
0½0.1
2.5
0.45
JEITA：－
JEDEC：－
Terminal Connector
①：Base
②：Emitter
③：Collector
ISAHAYA ELECTRONICS CORPORATION
0.25
3.0
0.4
ＲＴ１Ｎ４３０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ½
Ｔ½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RT1N430T
RT1N430U
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
125
（※ ）
+125
-55½+125
150
RATING
RT1N430M RT1N430C
50
6
50
100
200
200
+150
-55½+150
RT1N430S
UNIT
450
V
V
V
mA
mA
mW
℃
℃
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
½
ＦＥ
Ｖ
ＣＥ（½½½）
Ｒ
１
½
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=100μA，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=1mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
100
3.3
LIMIT
TYP
MAX
0.1
UNIT
V
μA
－
V
kΩ
MHz
=-10mA
0.1
4.7
200
0.3
6.1
TYPICAL CHARACTERISTICS
Input on voltage - Collector current
10
DC forward gain current - Collector current
1000
V
CE
=0.2V
Input on voltage VI(ON) (V)
DC forward gain current hFE
V
CE
=5V
1
100
0.1
0.1
1
10
Collector current Ic (mA)
100
10
0.1
1
10
Collector current Ic(mA)
100
Collector current -Input off voltage
1000
V
CE
=5V
Collector current Ic (uA)
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Input off voltage VI(OFF) (V)
1.6
1.8
2
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·
ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·
These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
ISAHAYA or third party.
·
ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,
originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
·
All information contained in these materials, including product data, diagrams and charts, represent information on products
at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·
ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
·
The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these
materials.
·
If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a
license from the Japanese government and cannot be imported into a country other than the approved destination. Any
diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is
h
prohibited.
·
Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
materials or the products contained therein.
Jan.2003
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