Crystal oscillator
HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-710 series
•
•
•
•
Ceramic package with 1.5 mm thickness.
Excellent shock resistance and environmental capability.
Low current consumption due to use of C-MOS technology.
Low current consumption by output enabled function (OE) or
standby function (ST).
Specifications (characteristics)
Item
Output frequency range
Power source
voltage
Temperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
T
SOL
∆f/f
0
Iop
I
OE
I
ST
t
w
/ t
V
OH
V
OL
N
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
24 mA Max.
12 mA Max.
SG-710PTK
SG-710PHK
Specifications
SG-710ECK
Remarks
1.8000 MHz to
50.0000 MHz
1.8000 MHz to
80.0000 MHz
1.8000 MHz to
67.0000 MHz
-0.5 V to +7.0 V
5.0
V
±0.5
V
3.3
V
±0.3
V
-55 °C to +125 °C
-10
°C
to +70
°C
(-40
°C
to +85
°C
)
Please contact us on availability of -40
°C
to +85
°C
B,C:-10 °C to +70 °C, M:-40 °C to +85 C°
No load condition
OE=GND(PTK, PHK)
ST=GND(ECK)
C-MOS load: 1/2 V
DD
level
TTL load: 1.4 V level
I
OH
=-16 mA(PTK,PHK),-2 mA(ECK)
I
OL
= 16 mA(PTK,PHK), 2 mA(ECK)
Soldering condition
Frequency stability
Current consumption
Output disable current
Standby current
Duty
High output voltage
Low output voltage
Output load
condition (fan out)
Twice at under +260 °C within 10 s
B: ±50 x 10
-6
C: ± 100 x 10
-6
M: ± 100 x 10
-6
40 mA Max.
16 mA Max.
18 mA Max.
—
—
—
45 % to 55 %
2.4 V Min.
0.4 V Max.
10 TTL Max.
(15 pF Max.)
2.0 V Min.
0.8 V Max.
—
5 ns Max.
—
5 ns Max.
45 % to 55 %
40 % to 60 %
V
DD
-0.5 V Min.
0.5 V Max.
10 TTL Max.
50 pF Max.
2.0 V Min.
0.8 V Max.
5 ns Max.
—
5 ns Max.
—
10 ms Max.
±5 x 10
-6
/year Max.
±10 x 10
-6
Max.
10
µA Max.
40 % to 60 %
—
0.9
x
V
DD
Min.
0.1
x
V
DD
Max.
—
15 pF Max.
0.7 x V
DD
Min.
0.3 x V
DD
Max.
6 ns Max.
6 ns Max.
TTL
C-MOS
Output enable/disable input voltage
Output rise time
C-MOS level
TTL level
C-MOS level
Output fall time
TTL level
Oscillation start up time
Aging
Shock resistance
OE
terminal
(PTK,PHK)
ST
terminal
(ECK)
C-MOS load: 10
%→
90
%
V
DD
TTL load: 0.4 V
→
2.4 V
C-MOS load: 90
%→
10
%
V
DD
TTL load: 2.4 V
→
0.4 V
_
Time at minimum operating voltage to be 0 s
Ta= +25 °C, V
DD
= 5.0 V/3.3 V(ECK)
Three drops on a hard board from 750 mm
or excitation test with 29400 m/s
2
x 0.3 ms x
1/2sine wave in 3 directions
External dimensions
Bottom View
#4
#3
#1
1.4
#2
(Unit: mm)
NO.
Pin terminal
1 OE or ST
2
GND
3
OUT
4
V
DD
Recommended soldering pattern
1.8
(Unit: mm)
2.6
E
40.000
W
HC724A
L
1.5
Max.
L
W
4.2
#1
#2
#4
5.08
#3
PTK/PHK/ECK
7.5 Max. 5.0 Max.
∗∗W
7.2 Max. 5.2 Max.
5.08
5.08
37
2.0
Actual size
Specifications (characteristics)
Item
Output frequency range
Symbol
f
0
SG-710PTW/STW
SG-710PHW/SHW
Specifications
SG-710PCW/SCW
66.6667 MHz to
135.0000 MHz
Remarks
80.0001 MHz to 135.0000 MHz
Power source
Max. supply voltage
V
DD
-GND
V
DD
voltage
Operating voltage
T
STG
Temperature
Storage temperature
T
OPR
range
Operating temperature
T
SOL
Soldering condition (lead part)
Frequency stability
Current consumption
Output disable current
Output disable current
C-MOS level
Duty
TTL level
Output voltage
∆f/f
0
Iop
Io
E
I
ST
tw/t
V
OH
V
OL
C
L
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
Output load condition (fan out)
Output enable
disable input voltage
C-MOS level
Output
TTL level
rise time
C-MOS level
Output
TTL level
fall time
Oscillation start up time
Aging
Shock resistance
-0.5 V to +7.0 V
5.0
V±0.5 V
3.3
V±0.3 V
-55 °C to +125 °C
-20
°C
to +70
°C
-40
°C
to +85
°C
Twice at under 260
°
C
within 10 s or under 230
°
C
within 3 min.
B: ±50
x 10
-6
C: ±100
x 10
-6
M: ±100
x 10
-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50
µA
Max.
—
40 % to 60 %
40 % to 60 %
—
V
DD
-0.4 V Min.
0.4 V Max.
15 pF Max.
0.7 V
DD
Min.
2.0 V Min.
0.2 V
DD
Max.
0.8 V Max.
3 ns Max.
—
3 ns Max.
—
4 ns Max.
—
3 ns Max.
—
3 ns Max.
—
4 ns Max.
—
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
-20 °C to +70 °C
-40 °C to +85 °C
No load condition
OE=GND(P*W)
ST=GND(S*W)
C-MOS load: 1/2V
DD
TTL load: 1.4 V
I
OH
= -16
m
A (*TW/HW)/-8 mA(
*CW)
I
OL
= -16
m
A (*TW/HW)/8 mA(
*CW)
OE,ST
OE,ST
C-MOS load: 20 %→80 % V
DD
TTL load: 0.4 V→2.4 V
C-MOS load: 80 %→20 % V
DD
TTL load: 2.4 V→0.4 V
Time at 4.5 V to be 0 s
Ta=+25 °C, V
DD
=5 V
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x 1/2
sine wave in 3 directions
Operating condition and Frequency band
Operating condition
Frequency stability:B
( -20 to +70
°C)
5 V±0.5
V
Frequency stability:C
(-20 to +70
°C)
Frequency stability:M
( -40 to +85
°C)
Frequency stability:B
( -20 to +70
°C)
3.3 V±0.3
V
Frequency stability:C
( -20 to +70
°C)
Frequency stability:M
( -40 to +85
°C)
1 MHz
1.8
SG-710PTK
1.8
SG-710PTK
1.8
SG-710PTK
1.8
26
SG-710ECK
1.8
26
SG-710ECK
1.8
26
SG-710ECK
67
SG-710PCW/SCW
67
SG-710PCW/SCW
135
50
SG-710PHK
67
SG-710PCW/SCW
135
135
50
SG-710PHK
80
50 MHz
50
SG-710PHK
80
SG-710PTW/STW/PHW/SHW
80
SG-710PTW/STW/PHW/SHW
135
100 MHz
150 MHz
135
38
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