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MJD2955 (PNP)
MJD3055 (NPN)
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
Features
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to MJE2955 and MJE3055
DC Current Gain Specified to 10 Amperes
High Current Gain−Bandwidth Product − f
T
= 2.0 MHz (Min) @ I
C
= 500 mAdc
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
Pb−Free Packages are Available
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
1 2
3
DPAK
CASE 369C
STYLE 1
YWW
J
xx55G
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
{
P
D
1.75
0.014
T
J
, T
stg
−55 to +150
Max
60
70
5
10
6
20
0.16
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
W
W/°C
°C
1
2
3
4
YWW
J
xx55G
DPAK−3
CASE 369D
STYLE 1
Y
= Year
WW = Work Week
Jxx55 = Device Code
x = 29 or 30
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note1)
Symbol
R
qJC
R
qJA
Max
6.25
71.4
Unit
°C/W
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 8
Publication Order Number:
MJD2955/D
MJD2955 (PNP) MJD3055 (NPN)
Î Î Î
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ÎÎÎ Î Î Î
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Î
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Î ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î Î
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Î
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ÎÎ Î Î Î
Î Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
V
CEO(sus)
I
CEO
I
CEX
60
−
−
Vdc
Collector Cutoff Current (V
CE
= 30 Vdc, I
B
= 0)
50
mAdc
Collector Cutoff Current
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc)
(V
CE
= 70 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
Collector Cutoff Current
(V
CB
= 70 Vdc, I
E
= 0)
(V
CB
= 70 Vdc, I
E
= 0, T
C
= 150_C)
Emitter Cutoff Current (V
BE
= 5 Vdc, I
C
= 0)
mAdc
−
−
−
−
−
0.02
2
0.02
2
0.5
I
CBO
mAdc
I
EBO
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 4 Adc, V
CE
= 4 Vdc)
(I
C
= 10 Adc, V
CE
= 4 Vdc)
h
FE
−
20
5
−
−
−
100
−
1.1
8
1.8
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 4 Adc, I
B
= 0.4 Adc)
(I
C
= 10 Adc, I
B
= 3.3 Adc)
Base−Emitter On Voltage (Note 2)
(I
C
= 4 Adc, V
CE
= 4 Vdc)
V
CE(sat)
Vdc
V
BE(on)
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 500 kHz)
f
T
2
−
MHz
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
ORDERING INFORMATION
Device
MJD2955
MJD2955G
MJD2955−001
MJD2955−001G
MJD2955T4
MJD2955T4G
MJD3055
MJD3055G
MJD3055T4
MJD3055T4G
Package Type
DPAK
DPAK
(Pb−Free)
DPAK−3
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
DPAK
DPAK
(Pb−Free)
2500 Tape & Reel
369C
75 Units / Rail
2500 Tape & Reel
369D
369C
75 Units / Rail
Package
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MJD2955 (PNP) MJD3055 (NPN)
TYPICAL CHARACTERISTICS
T
A
T
C
2.5 25
PD, POWER DISSIPATION (WATTS)
2 20
T
C
T
A
SURFACE
MOUNT
1.5 15
1 10
0.5
5
0
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
500
300
200
hFE , DC CURRENT GAIN
100
50
30
20
10
5
0.01
V
CE
= 2 V
T
J
= 150°C
t, TIME (
μ
s)
25°C
−55
°C
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
t
d
@ V
BE(off)
≈
5 V
t
r
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.06 0.1
0.2
0.4
0.6
1
2
4
6
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
Figure 3. Turn−On Time
1.4
1.2
V, VOLTAGE (VOLTS)
1
0.8
0.6
0.4
0.2
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3
0.5
1
2
3
5
10
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2 V
t, TIME (
μ
s)
T
J
= 25°C
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06 0.1
t
s
T
J
= 25°C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
t
f
0.2
0.4
0.6
1
2
4
6
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages, MJD3055
Figure 5. Turn−Off Time
http://onsemi.com
3
MJD2955 (PNP) MJD3055 (NPN)
2
T
J
= 25°C
25
ms
+11 V
1.2
V
BE(sat)
@ I
C
/I
B
= 10
0.8
V
BE
@ V
CE
= 3 V
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.1
0.2 0.3
0.5
1
2 3
I
C
, COLLECTOR CURRENT (AMP)
5
10
0
−9 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
51
−4 V
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
D
1
R
B
R
C
SCOPE
V
CC
+30 V
1.6
V, VOLTAGE (VOLTS)
Figure 6. “On” Voltages, MJD2955
Figure 7. Switching Time Test Circuit
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
q
JC(t)
P
(pk)
0.1
0.07
0.05
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.03
0.02
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
50
100
200 300
500
1k
Figure 8. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5
3
2
1
0.5
0.3
0.1
T
J
= 150°C
500
ms
100
ms
1 ms
5 ms
dc
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
0.05
0.03
0.02
0.01
0.6
1
WIRE BOND LIMIT
THERMAL LIMIT T
C
= 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
2
20
40
4
6
10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
60
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 9. Maximum Forward Bias
Safe Operating Area
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