Technical Data Sheet
3mm Phototransistor T-1
PT202C
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
․PT202C
is a high speed and high sensitive NPN silicon
phototransistor molded in a standard
φ3
mm package.
Due to is water clear epoxy the device is sensitive
to visible and near infrared radiation.
Applications
․Infrared
applied system
․Camera
․Printer
․Opto-electronic
switch
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Water clear
Everlight Electronics Co., Ltd.
Device No：DPT-020-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 1 of 7
Prepared by：Jaine Tsai
PT202C
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature*1
Power Dissipation at (or below)
25℃ Free Air Temperature
Notes:
*1:Soldering time≦5 seconds.
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
Rating
30
5
20
-25 ~ +85℃
-40 ~ +85℃
260
75
Units
V
V
mA
℃
℃
℃
mW
Everlight Electronics Co., Ltd.
Device No：DPT-020-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 2 of 7
Prepared by：Jaine Tsai
PT202C
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark Current
On State Collector Current
Symbol
λ
0.5
λ
P
BV
CEO
BV
ECO
V
CE(sat)
t
r
t
f
I
CEO
I
C(on)
Condition
---
---
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
V
CE
=5V
I
C
=1mA
RL=1000Ω
Ee=0mW/cm
2
V
CE
=20V
Ee=1mW/cm
2
V
CE
=5V
Min.
400
---
30
5
---
---
---
---
0.7
Typ.
---
940
---
---
---
15
15
---
2.0
Max.
1100
---
---
---
0.4
---
---
100
---
nA
mA
Units
nm
nm
V
V
V
μS
Rankings
Parameter
G
H
J
K
I
C(ON)
Symbol
Min
0.70
1.14
1.77
2.67
Max
1.90
2.60
3.61
5.07
mA
V
CE
=5V
Ee=1mW/c
㎡
Unit
Test Condition
Everlight Electronics Co., Ltd.
Device No：DPT-020-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 3 of 7
Prepared by：Jaine Tsai
PT202C
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25
C
0.8
0.6
0.4
0.2
0
100 300 500 700 900 1100 1300
O
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
100
C
10
1
0.1
0.01
0.5
1
1.5
2
3
Everlight Electronics Co., Ltd.
Device No：DPT-020-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 4 of 7
Prepared by：Jaine Tsai
PT202C
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No：DPT-020-009
http:\\www.everlight.com
Prepared date：07-20-2005
Rev 2
Page: 5 of 7
Prepared by：Jaine Tsai
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