Technical Data Sheet
High Power Infrared LED
HIR36-01C/S32
Features
․High
reliability
․High
radiant intensity
․Peak
wavelength
λp=850nm
․Low
forward voltage
․Pb
free
․The
product itself will remain within RoHS compliant version.
Descriptions
․EVERLIGHT’S
Infrared Emitting Diode(HIR36-01C/S32)
is a high intensity diode , molded in a water clear plastic
package.
․The
device is spectrally matched with phototransistor , photodiode
and infrared receiver module.
Applications
․CCTV
․Infrared
applied system
Device Selection Guide
LED Part No.
HIR
Chip
Material
AlGaAs
Lens Color
Water Clear
Everlight Electronics Co., Ltd.
Device No：DIH-036-099
http:\\www.everlight.com
Prepared date：05-17-2007
Rev 1
Page: 1 of 7
Prepared by：Daniel Yang
HIR36-01C/S32
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.25mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Continuous Forward Current
Peak Forward Current *1
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature*2
Power Dissipation at(or below)
25℃Free Air Temperature
Symbol
I
F
I
FP
V
R
T
opr
T
stg
T
sol
P
d
Rating
100
1.0
5
-40 ~ +85
-40 ~ +100
260
200
Units
mA
A
V
℃
℃
℃
mW
Notes:
*1:I
FP
Conditions--Pulse Width≦100μs and Duty≦1%.
*2:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No：DIH-036-099
http:\\www.everlight.com
Prepared date：05-17-2007
Rev 1
Page: 2 of 7
Prepared by：Daniel Yang
HIR36-01C/S32
Electro-Optical Characteristics (Ta=25℃)
Parameter
Radiant Intensity
Peak Wavelength
Spectral Bandwidth
Forward Voltage
Optical Rise Time
Optical Fall Time
Reverse Current
View Angle
Symbol
Ie
λp
Δλ
V
F
tr
tf
I
R
2θ1/2
Condition
I
F
=20mA
I
F
=100mA
Pulse Width≦100μs ,Duty≦1%
Min.
15
--
--
--
--
--
--
--
--
--
Typ.
29
150
850
50
1.45
1.80
11
7
--
20
Max.
--
Units
mW/sr
--
--
--
1.65
2.40
--
--
10
--
nm
nm
V
ns
ns
μA
deg
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=100mA
Pulse Width≦100μs ,Duty≦1%
I
F
=20mA
I
F
=20mA
V
R
=5V
I
F
=20mA
Rank
Condition: I
F
=20mA
Unit: mW/sr
Bin number
Min
Max
P
15.0
24.0
Q
21.0
34.0
R
30.0
48.0
Everlight Electronics Co., Ltd.
Device No：DIH-036-099
http:\\www.everlight.com
Prepared date：05-17-2007
Rev 1
Page: 3 of 7
Prepared by：Daniel Yang
HIR36-01C/S32
Typical Electro-Optical Characteristics Curves
Fig.1 Forward Current vs.
Ambient Temperature
140
120
100
80
60
40
20
0
Fig.2 Spectral Distributio
n
100
80
60
40
20
0
I
F
=20mA
Ta=25° C
-40 -20 0
20
40
60
80
100
790 810 830 850 870 890 910 930 950
Fig.3 Peak Emission Wavelength
Ambient Temperature
900
Fig.4 Forward Current
vs. Forward Voltage
4
10
875
3
10
850
825
2
10
800
-25
0
25
50
75
100
1
10
0
1
2
3
4
5
6
7
8
Everlight Electronics Co., Ltd.
Device No：DIH-036-099
http:\\www.everlight.com
Prepared date：05-17-2007
Rev 1
Page: 4 of 7
Prepared by：Daniel Yang
HIR36-01C/S32
Typical Electro-Optical Characteristics Curve
Fig.5 Relative Intensity vs.
Forward Current
Fig.6 Relative Radiant Intensity vs.
Angular Displacement
1000
Ie-Radiant Intensity(mW/sr)
-20
-10
0
10
20
30
100
1.0
10
40
50
60
70
80
0.6 0.4 0.2
0
0.2 0.4 0.6
0.9
0.8
0.7
0
10
0
10
1
10
2
10
3
10
4
I
F
-Forward Current (mA
)
Everlight Electronics Co., Ltd.
Device No：DIH-036-099
http:\\www.everlight.com
Prepared date：05-17-2007
Rev 1
Page: 5 of 7
Prepared by：Daniel Yang
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