RO3103A
•
•
•
•
•
Ideal for European 418.0 MHz Transmitters
Very Low Series Resistance
Quartz Stability
Surface-Mount Ceramic Case
Complies with Directive 2002/95/EC (RoHS)
Pb
The RO3103A is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case.
It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters
operating at 418 MHz. This SAW is designed specifically for remote-control and wireless security transmitters
operating in Europe under ETSI I-ETS 300 220 and in Germany under FTZ 17 TR 2100.
418.0 MHz
SAW
Resonator
Absolute Maximum Ratings
Rating
CW RF Power Dissipation (See: Typical Test Circuit)
DC voltage Between Terminals (Observe ESD Precautions)
Case Temperature
Soldering Temperature (10 seconds / 5 cycles max.)
Value
+0
±30
-40 to +125
260
Units
dBm
VDC
°C
°C
SM5035-4
Typical
Maximum
418.075
±75
1.5
9700
1300
2.0
Electrical Characteristics
Characteristic
Center Frequency (+25 °C)
Insertion Loss
Quality Factor
Temperature Stability
Unloaded Q
50
Ω
Loaded Q
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Frequency Aging
RF Equivalent RLC Model
Absolute Value during the First Year
Motional Resistance
Motional Inductance
Motional Capacitance
Shunt Static Capacitance
Test Fixture Shunt Inductance
Lid Symbolization (in addition to Lot and/or Date Codes)
DC Insulation Resistance between Any Two Terminals
R
M
L
M
C
M
C
O
L
TEST
5, 6, 9
2, 7
659 // YWWS
2.1
5, 7, 9
Absolute Frequency
Tolerance from 418.00 MHz
Sym
f
C
Δf
C
IL
Q
U
Q
L
T
O
f
O
FTC
|f
A
|
Notes
2,3,4,5
2,5,6
5,6,7
Minimum
417.925
Units
MHz
kHz
dB
10
6,7,8
1
5
1.0
25
f
C
0.032
≤10
15
57
2.5
2.4
40
°C
ppm/°C
2
ppm/yr
MΩ
Ω
µH
fF
2.7
pF
nH
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
2.
3.
4.
5.
6.
Frequency aging is the change in f
C
with time and is specified at +65°C or
less. Aging may exceed the specification for prolonged temperatures
above +65°C. Typically, aging is greatest the first year after manufacture,
decreasing in subsequent years.
The center frequency, f
C
, is measured at the minimum insertion loss point,
IL
MIN
, with the resonator in the 50
Ω
test system (VSWR
≤
1.2:1). The
shunt inductance, L
TEST
, is tuned for parallel resonance with C
O
at f
C
.
Typically, f
OSCILLATOR
or f
TRANSMITTER
is approximately equal to the
resonator f
C
.
One or more of the following United States patents apply: 4,454,488 and
4,616,197.
Typically, equipment utilizing this device requires emissions testing and
government approval, which is the responsibility of the equipment
manufacturer.
Unless noted otherwise, case temperature T
C
= +25°C±2°C.
The design, manufacturing process, and specifications of this device are
subject to change without notice.
7.
8.
9.
10.
Derived mathematically from one or more of the following directly
measured parameters: f
C
, IL, 3 dB bandwidth, f
C
versus T
C
, and C
O
.
Turnover temperature, T
O
, is the temperature of maximum (or turnover)
frequency, f
O
. The nominal frequency at any case temperature, T
C
, may be
calculated from: f = f
O
[1 - FTC (T
O
-T
C
)
2
]. Typically
oscillator
T
O
is
approximately equal to the specified
resonator
T
O
.
This equivalent RLC model approximates resonator performance near the
resonant frequency and is provided for reference only. The capacitance C
O
is the static (nonmotional) capacitance between the two terminals
measured at low frequency (10 MHz) with a capacitance meter. The
measurement includes parasitic capacitance with "NC” pads unconnected.
Case parasitic capacitance is approximately 0.05 pF. Transducer parallel
capacitance can by calculated as: C
P
≈
C
O
- 0.05 pF.
Tape and Reel standard per ANSI / EIA 481.
www.RFM.com
E-mail: info@rfm.com
©2008 by RF Monolithics, Inc.
Page 1 of 2
RO3103A - 3/26/08
Electrical Connections
The SAW resonator is bidirectional and may be
installed with either orientation. The two terminals
are interchangeable and unnumbered. The callout
NC indicates no internal connection. The NC pads
assist with mechanical positioning and stability.
External grounding of the NC pads is
recommended to help reduce parasitic
capacitance in the circuit.
Terminal
Case Ground
Case Ground
Equivalent LC Model
0.05 pF*
Co = Cp + 0.05 pF
Cp
*Case Parasitics
Terminal
Rm
Lm
Cm
Temperature Characteristics
The curve shown on the right
accounts for resonator
contribution only and does not
include LC component
temperature contributions.
f
C
= f
O
, T
C
= T
O
0
(f-fo ) / fo (ppm)
Typical Test Circuit
The test circuit inductor, L
TEST
, is tuned to resonate with the static
capacitance, C
O
, at F
C
.
0
-50
-100
-150
-200
0 +20 +40 +60 +80
-50
-100
-150
-200
-80 -60 -40 -20
ELECTRICAL TEST
From 50
Ω
Network Analyzer
To 50
Ω
Network Analyzer
Typical Circuit
Land Pattern
Board
Δ
T = T
C
- T
O
( °C )
The circuit board land pattern
shown below is one possible design. The optimum land pattern is
dependent on the circuit board assembly process which varies by
manufacturer. The distance between adjacent land edges should be at a
maximum to minimize parasitic capacitance. Trace lengths from terminal
lands to other components should be short and wide to minimize parasitic
series inductances.
POWER TEST
P INCIDENT
(4 Places)
Low-Loss
Matching
Network to
50
Ω
Terminal
NC
NC
Terminal
50
Ω
Source
P
at F
C
REFLECTED
Typical Dimension:
0.010 to 0.047 inch
(0.25 to 1.20 mm)
Case Design
CW RF Power Dissipation =
P INCIDENT - P REFLECTED
Top View
B
Side View
C
Bottom View
E (3x)
Typical Application Circuits
Typical Low-Power Transmitter Application
+9VDC
200k
Ω
L1
(Antenna)
A
4
F (4x)
Modulation
Input
C1
47
3
2
1
C2
RO3XXXA
Bottom View
470
RF Bypass
D
G (1x)
Typical Local Oscillator Applications
Output
Dimension
s
A
B
C
D
E
F
G
Millimeters
Min
4.87
3.37
1.45
1.35
.67
.37
1.07
Inches
Max
5.13
3.63
1.60
1.50
.93
.63
1.33
Nom
5.0
3.5
1.53
1.43
.80
.50
1.20
Min
.191
.132
.057
.040
.026
.014
.042
Nom
.196
.137
.060
.057
.031
.019
.047
Max
.201
.142
.062
.059
.036
.024
.052
+VDC
C1
L1
C2
RO3XXXA
Bottom View
RF Bypass
+VDC
www.RFM.com
E-mail: info@rfm.com
©2008 by RF Monolithics, Inc.
Page 2 of 2
RO3103A - 3/26/08
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
