RHRU7570, RHRU7580,
RHRU7590, RHRU75100
March 2001
75A, 700V - 1000V Hyperfast Diode
Package
JEDEC STYLE SINGLE LEAD TO-218
TOP VIEW
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 1000V
• Avalanche Energy Rated
• Planar Construction
ANODE
CATHODE
(FLANGE)
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
RHRU7570, RHRU7580, RHRU7590 and RHRU75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (t
RR
< 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
These devices are supplied in the single lead JEDEC style
TO-218 plastic package.
Due to space limitations, the brand on the RHRU75100 is
abbreviated to HRU75100.
To order this part use the full part number, i.e. RHRU75100.
Symbol
K
A
Absolute Maximum Ratings
(T
C
= +25
o
C), Unless Otherwise Specified
RHRU7570
Peak Repetitive Reverse VoltageV
RRM
Working Peak Reverse VoltageV
RWM
DC Blocking VoltageV
R
Average Rectified Forward CurrentI
F(AV)
(T
C
= +52
o
C)
Repetitive Peak Surge CurrentI
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge CurrentI
FSM
(Halfwave, 1 phase, 60Hz)
Maximum Power DissipationP
D
Avalanche Energy (L = 40mH) (See Figures 10 and 11)E
AVL
Operating and Storage TemperatureT
STG
,T
J
©2001 Fairchild Semiconductor Corporation
RHRU7580
800
800
800
75
150
750
190
50
-65 to +175
RHRU7590 RHRU75100 UNITS
900
900
900
75
150
750
190
50
-65 to +175
1000
1000
1000
75
150
750
190
50
-65 to +175
V
V
V
A
A
A
W
mj
o
C
700
700
700
75
150
750
190
50
-65 to +175
RHRU7570, RHRU7580, RHRU7590, RHRU75100 Rev. A
Specifications RHRU7570, RHRU7580, RHRU7590, RHRU75100
Electrical Specifications
SYMBOL
V
F
TEST CONDITION
I
F
= 75A, T
C
= +25
o
C
I
F
= 75A, T
C
= +150
o
C
I
R
V
R
= 700V, T
C
= +25
o
C
V
R
= 800V, T
C
= +25
o
C
V
R
= 900V, T
C
=
+25
o
C
-
-
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
2.0
V
R
= 1000V, T
C
= +25
o
C
I
R
V
R
= 700V, T
C
= +150
o
C
V
R
= 800V, T
C
= +150
o
C
V
R
= 900V, T
C
= +150
o
C
V
R
= 1000V, T
C
=
+150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 100A/
µ
s
I
F
= 75A, dI
F
/dt = 100A/
µ
s
t
A
t
B
Q
RR
C
J
R
θ
JC
DEFINITIONS
V
F
= Instantaneous Forward Voltage (pw = 300
µ
s, D = 2%)
I
R
= Instantaneous Reverse Current
t
RR
= Reverse Recovery Time (Figure 2), Summation of t
A
+ t
B
t
A
= Time to Reach Peak Reverse Current (See Figure 2).
t
B
= Time from Peak I
RM
to Projected Zero Crossing of I
RM
Based on a Straight Line from Peak I
RM
Through 25% of I
RM
(See Figure 2)
Q
RR
= Reverse Recovery Charge
C
J
= Junction Capacitance
R
θ
JC
= Thermal resistance junction to case
pw = Pulse Width
D = Duty Cycle
I
F
= 75A, dI
F
/dt = 100A/
µ
s
I
F
= 75A, dI
F
/dt = 100A/
µ
s
I
F
= 75A, dI
F
/dt = 100A/
µ
s
V
R
= 10V, I
F
= 0A
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
-
85
100
-
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
-
85
100
-
-
-
-
0.8
T
C
= +25
o
C, Unless Otherwise Specified
RHRU7570
MIN
-
-
-
-
TYP
-
-
-
-
MAX
3.0
2.5
50
-
RHRU7580
MIN
-
-
-
-
TYP
-
-
-
-
MAX
3.0
2.5
-
50
RHRU7590
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
0.8
MAX
3.0
2.5
-
-
50
-
-
-
2.0
-
85
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
55
40
240
220
-
2.0
85
100
-
-
-
-
0.8
-
-
-
-
-
-
50
-
-
RHRU75100
MIN
-
-
-
-
TYP
-
-
-
-
MAX
3.0
2.5
-
-
UNITS
V
V
µ
A
µ
A
µ
A
µ
A
mA
mA
mA
mA
ns
ns
ns
ns
nC
pF
o
C/W
©2001 Fairchild Semiconductor Corporation
RHRU7570, RHRU7580, RHRU7590, RHRU75100 Rev. A
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
t
A(MIN)
L
1
≤
R
4
10
L
LOOP
DUT
Q
4
0.25 I
RM
0
I
F
dI
F
dt
t
A
t
RR
t
B
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
I
RM
V
R
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
WAVEFORMS AND DEFINITIONS
©2001 Fairchild Semiconductor Corporation
RHRU7570, RHRU7580, RHRU7590, RHRU75100 Rev. A
RHRU7570, RHRU7580, RHRU7590, RHRU75100
Typical Performance Curves
400
I
R
, REVERSE CURRENT - (µA)
I
F
, FORWARD CURRENT - (A)
1000
+175
o
C
100
+100
o
C
100
+100
o
C
+175
o
C
10
+25
o
C
10
1
0.1
+25
o
C
1
0
1
3
2
V
F
, FORWARD VOLTAGE - (V)
4
5
0.01
0
200
400
600
800
1000
V
R
, REVERSE VOLTAGE - (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs. FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs. REVERSE
VOLTAGE
100
T
C
= +25
o
C
300
250
T
C
= +100
o
C
t, RECOVERY TIMES - (ns)
t
RR
t, RECOVERY TIMES - (ns)
80
200
150
t
RR
60
t
A
40
t
B
t
B
100
50
0
t
A
20
0
1
10
I
F
, FORWARD CURRENT - (A)
75
1
10
I
F
, FORWARD CURRENT - (A)
75
FIGURE 5. TYPICAL t
RR
, t
A
AND t
B
CURVES vs. FORWARD
CURRENT AT +25
o
C
FIGURE 6. TYPICAL t
RR
, t
A
AND t
B
CURVES vs. FORWARD
CURRENT AT +100
o
C
©2001 Fairchild Semiconductor Corporation
RHRU7570, RHRU7580, RHRU7590, RHRU75100 Rev. A
RHRU7570, RHRU7580, RHRU7590, RHRU75100
Typical Performance Curves
(Continued)
T
C
= +175
o
C
I
F
(AV), AVERAGE FORWARD CURRENT - (A)
75
500
t, RECOVERY TIMES - (ns)
400
60
DC
45
SQ. WAVE
30
300
t
RR
200
t
B
100
t
A
15
0
1
10
I
F
, FORWARD CURRENT - (A)
75
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE - (
o
C)
FIGURE 7. TYPICAL t
RR
, t
A
AND t
B
CURVES vs. FORWARD
CURRENT AT +175
o
C
800
C
J
, JUNCTION CAPACITANCE (pF)
700
600
500
400
300
200
100
0
0
50
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
100
V
R
, REVERSE VOLTAGE (V)
150
200
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs. REVERSE VOLTAGE
©2001 Fairchild Semiconductor Corporation
RHRU7570, RHRU7580, RHRU7590, RHRU75100 Rev. A
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
