64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, TSOP-32
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
零件包装代码 | TSOP |
包装说明 | TSOP1, TSSOP32,.8,20 |
针数 | 32 |
Reach Compliance Code | unknown |
最长访问时间 | 120 ns |
命令用户界面 | NO |
数据轮询 | YES |
耐久性 | 100000 Write/Erase Cycles |
JESD-30 代码 | R-PDSO-G32 |
长度 | 18.4 mm |
内存密度 | 524288 bit |
内存集成电路类型 | EEPROM |
内存宽度 | 8 |
湿度敏感等级 | 1 |
功能数量 | 1 |
端子数量 | 32 |
字数 | 65536 words |
字数代码 | 64000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 64KX8 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TSOP1 |
封装等效代码 | TSSOP32,.8,20 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE |
页面大小 | 128 words |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 225 |
电源 | 5 V |
编程电压 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
最大待机电流 | 0.0002 A |
最大压摆率 | 0.05 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | GULL WING |
端子节距 | 0.5 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
切换位 | YES |
宽度 | 8 mm |
最长写入周期时间 (tWC) | 5 ms |
Base Number Matches | 1 |
CAT28C512TI-12 | CAT28C512GI-12 | CAT28C512HI-12 | CAT28C512LI-12 | CAT28C512LI-15 | CAT28C512HI-15 | CAT28C512GI-15 | CAT28C512TI-15 | |
---|---|---|---|---|---|---|---|---|
描述 | 64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, TSOP-32 | 64KX8 EEPROM 5V, 120ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 64KX8 EEPROM 5V, 120ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 | 64KX8 EEPROM 5V, 120ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32 | IC 64K X 8 EEPROM 5V, 150 ns, PDIP32, LEAD AND HALOGEN FREE, PLASTIC, DIP-32, Programmable ROM | 64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, LEAD AND HALOGEN FREE, TSOP-32 | 64KX8 EEPROM 5V, 150ns, PQCC32, LEAD AND HALOGEN FREE, PLASTIC, LCC-32 | 64KX8 EEPROM 5V, 150ns, PDSO32, 8 X 20 MM, TSOP-32 |
零件包装代码 | TSOP | QFJ | TSOP | DIP | DIP | TSOP | QFJ | TSOP |
包装说明 | TSOP1, TSSOP32,.8,20 | QCCJ, LDCC32,.5X.6 | TSOP1, TSSOP32,.8,20 | DIP, | DIP, | TSOP1, TSSOP32,.8,20 | QCCJ, LDCC32,.5X.6 | TSOP1, TSSOP32,.8,20 |
针数 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | compliant | unknown | not_compliant |
最长访问时间 | 120 ns | 120 ns | 120 ns | 120 ns | 150 ns | 150 ns | 150 ns | 150 ns |
JESD-30 代码 | R-PDSO-G32 | R-PQCC-J32 | R-PDSO-G32 | R-PDIP-T32 | R-PDIP-T32 | R-PDSO-G32 | R-PQCC-J32 | R-PDSO-G32 |
长度 | 18.4 mm | 13.97 mm | 18.4 mm | 42.03 mm | 42.03 mm | 18.4 mm | 13.97 mm | 18.4 mm |
内存密度 | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit | 524288 bit |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 32 | 32 | 32 | 32 | 32 | 32 | 32 | 32 |
字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 | 64KX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TSOP1 | QCCJ | TSOP1 | DIP | DIP | TSOP1 | QCCJ | TSOP1 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE, THIN PROFILE | CHIP CARRIER | SMALL OUTLINE, THIN PROFILE | IN-LINE | IN-LINE | SMALL OUTLINE, THIN PROFILE | CHIP CARRIER | SMALL OUTLINE, THIN PROFILE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
编程电压 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 3.55 mm | 1.2 mm | 5.08 mm | 5.08 mm | 1.2 mm | 3.55 mm | 1.2 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | YES | NO | NO | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | GULL WING | J BEND | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | J BEND | GULL WING |
端子节距 | 0.5 mm | 1.27 mm | 0.5 mm | 2.54 mm | 2.54 mm | 0.5 mm | 1.27 mm | 0.5 mm |
端子位置 | DUAL | QUAD | DUAL | DUAL | DUAL | DUAL | QUAD | DUAL |
宽度 | 8 mm | 11.43 mm | 8 mm | 15.24 mm | 15.24 mm | 8 mm | 11.43 mm | 8 mm |
最长写入周期时间 (tWC) | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms | 5 ms |
是否Rohs认证 | 不符合 | 符合 | 符合 | - | - | 符合 | 符合 | 不符合 |
命令用户界面 | NO | NO | NO | - | - | NO | NO | NO |
数据轮询 | YES | YES | YES | - | - | YES | YES | YES |
耐久性 | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | - | - | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles | 100000 Write/Erase Cycles |
封装等效代码 | TSSOP32,.8,20 | LDCC32,.5X.6 | TSSOP32,.8,20 | - | - | TSSOP32,.8,20 | LDCC32,.5X.6 | TSSOP32,.8,20 |
页面大小 | 128 words | 128 words | 128 words | - | - | 128 words | 128 words | 128 words |
电源 | 5 V | 5 V | 5 V | - | - | 5 V | 5 V | 5 V |
最大待机电流 | 0.0002 A | 0.0002 A | 0.0002 A | - | - | 0.0002 A | 0.0002 A | 0.0002 A |
最大压摆率 | 0.05 mA | 0.05 mA | 0.05 mA | - | - | 0.05 mA | 0.05 mA | 0.05 mA |
切换位 | YES | YES | YES | - | - | YES | YES | YES |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
厂商名称 | - | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | - | ON Semiconductor(安森美) | ON Semiconductor(安森美) |
JESD-609代码 | - | e3 | e3 | e3 | e3 | e3 | e3 | - |
端子面层 | - | TIN | TIN | TIN | TIN | TIN | TIN | - |
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