S E M I C O N D U C T O R
RURD6120,
RURD6120S
6A, 1200V Ultrafast Diodes
Package
JEDEC STYLE TO-251
ANODE
CATHODE
April 1995
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <70ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
• Planar Construction
CATHODE
(FLANGE)
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
CATHODE
ANODE
JEDEC STYLE TO-252
CATHODE
(FLANGE)
Description
The RURD6120 and RURD6120S (TA49039) are ultrafast
diodes with soft recovery characteristics (t
RR
< 70ns). They
have low forward voltage drop and are silicon nitride passi-
vated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
RURD6120
RURD6120S
PACKAGE
TO-251
TO-252
BRAND
UR6120
UR6120
A
Symbol
K
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252 variant in the tape and reel, i.e., RURD6120S9A.
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
RURD6120
RURD6120S
1200
1200
1200
6
12
60
50
10
-65 to +175
UNITS
V
V
V
A
A
A
W
mJ
o
C
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 140
o
C)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 200kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Copyright
©
Harris Corporation 1995
5-41
File Number
3962.1
Specifications RURD6120, RURD6120S
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
RURD6120
RURD6120S
SYMBOL
V
F
TEST CONDITION
I
F
= 6A, T
C
= +25
o
C
I
F
= 6A, T
C
= +150
o
C
I
R
V
R
= 1200V, T
C
= +25
o
C
V
R
= 1200V, T
C
= +150
o
C
t
RR
I
F
= 1A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
t
A
t
B
Q
RR
C
J
R
θJC
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (See Figure 2), summation of t
A
+ t
B
.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 2).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
I
F
= 6A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
I
F
= 6A, dI
F
/dt = 200A/µs
V
R
= 10V, I
F
= 0A
MIN
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
45
30
400
22
-
MAX
2.1
1.9
100
500
70
90
-
-
-
-
3
UNITS
V
V
µA
µA
ns
ns
ns
ns
nC
pF
o
C/W
V
1
AMPLITUDE CONTROLS I
F
V
2
AMPLITUDE CONTROLS dI
F
/dt
L
1
= SELF INDUCTANCE OF
R
4
+ L
LOOP
R
1
Q
1
+V
1
0
t
2
t
1
R
2
+V
3
Q
2
t
1
≥
5t
A(MAX)
t
2
> t
RR
t
3
> 0
L
1
t
A(MIN)
≤
R
4
10
L
LOOP
DUT
Q
4
0.25 I
RM
0
I
F
dI
F
dt
t
A
t
RR
t
B
t
3
C1
0
-V
2
R
3
Q
3
-V
4
V
RM
R
4
I
RM
V
R
FIGURE 1. t
RR
TEST CIRCUIT
FIGURE 2. t
RR
TEST CIRCUIT
5-42
NXP MCU
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