= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 6), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 6).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 6).
R
θJC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
I
F
= 30A, dI
F
/dt= 100A/µs
I
F
= 30A, dI
F
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITION
MIN
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
20
15
-
MAX
1.0
0.85
250
1
45
50
-
-
1.2
UNITS
V
V
µA
mA
ns
ns
ns
ns
o
C/W
Typical Performance Curves
200
175
o
C
100
I
F
, FORWARD CURRENT (A)
I
R
, REVERSE VOLTAGE (A)
400
100
175
o
C
10
100
o
C
1
0.1
25
o
C
0.01
100
o
C
10
25
o
C
1
0
0.3
0.6
0.9
1.2
1.5
V
F
, FORWARD VOLTAGE (V)
0.001
0
50
100
150
200
V
R
, REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURG3020
Typical Performance Curves
40
trr
30
t, TIME (ns)
(Continued)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40
30
DC
20
SQUARE
WAVE
10
20
ta
tb
10
0
1
10
I
F
, FORWARD CURRENT (A)
30
0
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
DUT
R
G
V
GE
t
1
t
2
CURRENT
SENSE
+
V
DD
0
I
F
dI
F
dt
ta
trr
tb
IGBT
-
0.25 I
RM
I
RM
FIGURE 5. t
rr
TEST CIRCUIT
I = 1A
L = 40mH
R < 0.1Ω
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
FIGURE 6. t
rr
WAVEFORMS AND DEFINITIONS
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
3
RURG3020
Data Sheet
January 2000
File Number
3277.3
30A, 200V Ultrafast Diode
The RURG3020 is an ultrafast diode with soft recovery
characteristics (t
rr
< 45ns). It has low forward voltage drop
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and ultrafast recovery with soft recovery characteristics
minimizes ringing and electrical noise in many power
switching circuits, reducing power loss in the switching
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