SMA661AS
Fully integrated GPS LNA IC
Features
■
■
■
■
■
■
■
■
■
Power down function
Integrated matching networks
Low noise figure 1.15 dB @ 1.575 GHz
High gain 18 dB @ 1.575 GHz
High linearity (IIP3 = +3dBm)
Temperature compensated
Unconditionally stable
ESD protection (HBM
±
2kV)
70 GHz Silicon Germanium Technology
SOT666
(1.65 x 1.2 x 0.57 mm)
Applications
■
GPS
The SMA661AS, using the ST's leading-edge
70GHz SiGe BiCMOS technology, achieves
excellent RF performance at the GPS frequency of
1.575GHz, in terms of power gain, noise Figure
and linearity with a current consumption of 8.5mA.
The device is unconditionally stable and ESD
protected. All these features are steady over the
operating temperature range of -40
o
C to +85
o
C.
It's housed in ultra-miniature SOT666 plastic
package.
Description
The SMA661AS is the first low-noise amplifier
with integrated matching networks and embedded
power-down function. The chip, which requires
only one external input capacitor, drastically
reduces the application bill of materials and the
PCB area, resulting in an ideal solution for
compact and cost-effective GPS LNA.
Table 1.
Device summary
Marking
661
Package
SOT666
Packing
Tape and reel
Part Number
SMA661ASTR
April 2007
Rev 4
1/14
www.st.com
14
Contents
SMA661AS
Contents
1
2
Pins description and circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
4
5
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Evaluation board description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package and packing informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.1
5.2
Package informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing informations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
SMA661AS
Pins description and circuit schematic
1
Pins description and circuit schematic
Table 2.
Pins description
Pin No.
1
2
3
4
5
6
Pin Name
RF IN
GND
PD
RF OUT
GND
V
CC
Figure 1.
Pin connection
1
Top View
2
3
6
5
4
Figure 2.
Application circuit schematic
V C C (6 )
R F in p u t
C1
R F IN
(1 )
PD
(3 )
R F O U T (4 )
S M A6 6 1 A S
A 6 AS
GND
(2 ,5 )
R F O u tp u t
3/14
Electrical specifications
SMA661AS
2
2.1
Electrical specifications
Absolute maximum ratings
Table 3.
Symbol
V
cc
T
stg
T
a
V
ESD
V
ESD
Absolute maximum ratings
Parameter
Supply voltage
Storage temperature
Operating ambient temperature
Electrostatic Discharge
Electrostatic Discharge
HBM (ALL PINs)
MM (ALL PINs)
Conditions
Value
3.3
-60 to +150
-40 to +85
±
2000
±
200
Unit
V
o
C
o
C
V
V
2.2
Electrical characteristics
(T
a
= +25 °C, V
CC
= 2.7 V, Z
L
= Z
S
= 50 ohm, unless otherwise specified; measured
according to
Figure 13
at pin level)
Table 4.
Symbol
f
V
cc
I
cc
I
PD
G
p
NF
IIP2
IIP3
ISL
RLin
RLout
V
PDL(1)
V
PDH(2)
Stability
1. The device is switched to OFF state
2.
The device is switched to ON state
Electrical characteristics
Parameters
Frequency
Supply voltage
Current Consumption
Power Down Mode
Current Consumption
Power gain
Noise figure
Input IP2
Input IP3
Reverse Isolation
Input Return Loss
Output Return Loss
Power Down Low
State
Power Down High
State
100 - 10000 MHz
1.0
Unconditionally stable
f = 1500-1650 MHz
f = 1500-1650 MHz
f1 = 849 MHz, f2 = 2424 MHz,
Pin = -30 dBm
f1 = 1574.5 MHz, f2 = 1575.5
MHz, Pin = -30 dBm
V
PD
≤
V
PDL
2.4
Test Conditions
Min.
Typ.
1575
2.7
8.5
10
18
1.15
0.5
3
-28
10
10
0.5
3
Max.
Unit
MHz
V
mA
nA
dB
dB
dBm
dBm
dB
dB
dB
V
V
4/14
SMA661AS
Typical performance
3
Typical performance
(Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to
Figure 13
at pin level)
Figure 3.
Power Gain vs. Frequency
Figure 4.
Input Return Loss vs. Frequency
22
21
20
19
18
Gp (dB)
17
16
15
14
13
12
11
10
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000
f (MHz)
IRL (dB)
0
Ta = -40 ºC
Ta = +25 ºC
-2
-4
-6
Ta = -40 ºC
Ta = +25 ºC
Ta = +85 ºC
-8
-10
-12
-14
-16
-18
Ta = +85 ºC
-20
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000
f (MHz)
Figure 5.
Noise Figure vs. Frequency
Figure 6.
Reverse Isolation vs. Frequency
3.0
-20
-22
2.5
-24
-26
ISL (dB)
-28
-30
-32
-34
Ta = +25 ºC
Ta = -40 ºC
2.0
NF (dB)
Ta = +85 ºC
Ta = +85 ºC
1.5
1.0
Ta = +25 ºC
Ta = -40 ºC
0.5
-36
-38
0.0
1500
1520
1540
f (MHz)
1560
1580
1600
-40
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000
f (MHz)
Figure 7.
Output Return Loss vs. Frequency
Figure 8.
IIP3 vs. Temperature
0
-2
-4
-6
ORL (dB)
5
4.5
4
3.5
IIP3 (dBm)
Ta = +25 ºC
Ta = +85 ºC
-8
-10
3
2.5
2
1.5
1
0.5
0
-40
25
T (°C)
85
Ta = -40 ºC
-12
-14
-16
-18
-20
1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000
f (MHz)
5/14
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