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NLAS4717
4.5
W
High Bandwidth, Dual
SPDT Analog Switch
The NLAS4717 is an advanced CMOS analog switch fabricated in
sub-micron silicon gate CMOS technology. The device is a dual
independent Single Pole Double Throw (SPDT) switch featuring two
low R
DS(on)
of 4.5
W
at 3.0 V.
The device also features guaranteed Break-Before-Make (BBM)
switching, assuring the switches never short the driver.
The NLAS4717 is available in two small size packages:
♦
Micro10:
3.0 x 5.0 mm
♦
Flip-Chip-10:
2.0 x 1.5 mm
Features
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MARKING
DIAGRAMS
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Low R
DS(on)
: 4.5
W
@ 3.0 V
Matching Between the Switches
±0.5
W
Wide Low Voltage Range: 1.8 V to 5.5 V
High Bandwidth > 40 MHz
1.65 V to 5.5 V Operating Range
Low Threshold Voltages on Pins 4 and 8 (CTRL Pins)
Ultra-Low Charge Injection
≤
6.0 pC
Low Standby Current – I
CC
= 1.0 nA (Max) @ T
A
= 25°C
OVT* on Pins 4 and 8 (CTRL Logic Pins)
Pb-Free Packages are Available
A1
FLIP-CHIP-10
CASE 489AA
A1
10
4717
AYWW
G
G
Micro10
CASE 846B
A
Y
W, WW
G
4717
AYW
G
G
1
= Assembly Location
= Year
= Work Week
= Pb-Free Package
Typical Applications
Cell Phones
PDAs
MP3s
Digital Still Cameras
FUNCTION TABLE
IN_
0
1
NO_
OFF
ON
NC_
ON
OFF
Important Information
•
ESD Protection:
HBM = 2000 V, MM = 200 V
•
Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78)
•
Pin-to-Pin Compatible with MAX4717
*OVT
ORDERING INFORMATION
Device
NLAS4717FCT1
Package
Flip-Chip-10
Shipping
†
3000 /
Tape & Reel
3000 /
Tape & Reel
4000 /
Tape & Reel
4000 /
Tape & Reel
•
Overvoltage Tolerance (OVT) specific pins to operate higher than
normal supply voltages, with no damage to the devices or to signal
integrity.
NLAS4717FCT1G Flip-Chip-10
(Pb-Free)
NLAS4717MR2
Micro10
NLAS4717MR2G
Micro10
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 9
Publication Order Number:
NLAS4717/D
NLAS4717
GND
VCC
NO1
COM1
IN1
NC1
1
2
3
4
5
Micro10
(Top View)
10
9
8
7
6
NO2
COM2
IN1
IN2
COM1
NC2
NO1
GND
C
4
B
4
VCC
Flip-Chip-10
(Top View)
A
4
NO2
C
3
A
3
COM2
C
2
A
2
IN2
B
1
NC1
C
1
A
1
NC2
Figure 1. Device Circuit Diagrams and Pin Configurations
MAXIMUM RATINGS
Symbol
V+
V
IS
V
IN
I
IK
I
PK
Positive DC Supply Voltage
Analog Input Voltage (V
NO
, V
NC
, or V
COM
) (Note 1)
Digital Select Input Voltage
DC Current, Into or Out of Any Pin (Continuous)
Peak Current (10% Duty Cycle)
Parameter
Value
*0.5
to
)7.0
*0.5 v
V
IS
v
V
CC
)0.5
*0.5 v
V
I
v)7.0
$100
$200
Unit
V
V
V
mA
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum
current rating.
RECOMMENDED OPERATING CONDITIONS
Symbol
V+
V
IN
V
IS
T
A
t
r
, t
f
DC Supply Voltage
Digital Select Input Voltage
Analog Input Voltage (NC, NO, COM)
Operating Temperature Range
Input Rise or Fall Time, SELECT
V
CC
= 3.3 V
$
0.3 V
V
CC
= 5.0 V
$
0.5 V
Parameter
Min
1.8
GND
GND
-40
0
0
Max
5.5
5.5
V
CC
+85
100
20
Unit
V
V
V
°C
ns/V
ANALOG SWITCH DC CHARACTERISTICS
-40
°C
to +85°C
Symbol
V
IH
Parameter
Input Logic High Voltage
Condition
V
OUT
= 0.1 V
I
OUT
≤
20
mA
V
IL
Input Logic Low Voltage
V
OUT
= -V
CC
- 0.1 V
I
OUT
≤
20
mA
I
IN
V
CC
I
CC
Input Leakage Current
Power Supply Range
Supply Current
V
IN
– V
CC
or GND
All
V
IN
= V
CC
or GND
I
OUT
= 0
mA
V
IS
Analog Signal Range
Key parameter
V
CC
(V)
1.65 to 2.2
2.7 to 3.6
4.5 to 5.5
1.65 to 2.2
2.7 to 3.6
4.5 to 5.5
5.0
-
1.8
3.3
5.0
-
Min
V
CC
x 0.55
V
CC
x 0.5
2.0
-
-
-
-100
1.65
-
-
-
0
Max
-
-
-
V
CC
x 0.2
V
CC
x 0.2
0.8
+100
5.5
1.0
1.0
1.0
V
CC
V
nA
V
mA
V
Unit
V
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2
NLAS4717
ANALOG SWITCH CHARACTERISTICS - Digital Section
(Voltages Referenced to GND)
-40
°C
to +85°C
Symbol
R
ON
Parameter
ON Resistance
(Note 2)
Condition
V
CC
= 3.0 V
I
COM
= 10 mA
V
NO
or V
NC
= V
IH
or V
IL
V
CC
= 5.0 V
I
COM
= 10 mA
V
NO
or V
NC
= V
IH
or V
IL
DR
ON
ON Resistance
Match Between Channels
(Note 2 and 3)
V
CC
= 3.6 V
I
COM
= 10 mA
V
NO
or V
NC
= V
IH
or V
IL
V
CC
= 5.5 V
I
COM
= 10 mA
V
NO
or V
NC
= V
IH
or V
IL
R
FLAT[ON]
ON Resistance
Flatness
(Note 4)
I
COM
= 10 mA
V
IS
= 0 to V
CC
I
COM
= 10 mA
V
IS
= 0 to V
CC
I
NO_[OFF]
I
NC_[OFF]
NO_, NC_
Off-Leakage Current
(Note 5)
V
CC
= 3.6 V
V
COM
= 0.3 V or 3.3 V
V
NO
or V
NC
= 0.3 V or 3.3 V
V
CC
= 5.5 V
V
COM
= 0 V or 5.0 V
V
NO
or V
NC
= 0 V or 5.0 V
I
COM_[ON]
COM_
On-Leakage Current
(Note 5)
V
CC
= 3.6 V
V
COM
= 0.3 V or 3.3 V
V
NO
or V
NC
= 0.3 V or 3.3 V
V
CC
= 5.5 V
V
COM
= 0 V or 5.0 V
V
NO
or V
NC
= 0 V or 5.0 V
5.5
-2.0
0.01
+2.0
3.6
-2.0
0.01
+2.0
nA
5.5
-1.0
0.01
+1.0
3.6
-1.0
0.01
+1.0
nA
5.5
-
1.36
3.0
-
1.5
W
5.5
3.6
-
0.1
0.4
W
5.0
-
3.5
V
CC
(V)
3.0
Min
-
Typ
Max
4.5
Unit
W
ANALOG SWITCH AC CHARACTERISTICS
-40
°C
to +85°C
Symbol
t
ON
Parameter
Turn-On Time
Condition
V
NC_
, V
NO_
= V
IH
or V
IL
R
L
= 300
W,
C
L
= 35 pF
V
IN[x]
= V
IH
or V
IL
t
OFF
Turn-Of f Time
V
NC_
, V
NO_
= V
IH
or V
IL
R
L
= 300
W,
C
L
= 35 pF
V
IN[x]
= V
IH
or V
IL
t
BBM
Break-Before-Make
Time Delay
(Note 5)
Skew
(Note 5)
V
NC_
, V
NO_
= 1.5 V
R
L
= 300
W,
C
L
= 35 pF
R
S
= 39
W,
C
L
= 50 pF
-
-
0.15
2.0
nS
-
-
8.0
-
nS
1.8 to 5.5
-
-
40
nS
V
CC
(V)
1.8 to 5.5
Min
-
Typ
-
Max
30
Unit
nS
t
SKEW
2.
3.
4.
5.
R
ON
characterized for V
CC
range (1.65 V to 5.5 V).
DR
ON
= R
ON
(MAX) - R
ON
(MIN).
R
FLAT[ON]
= R
ON
(MAX) - R
ON
(MIN), measured over V
CC
range.
Guaranteed by design.
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3
NLAS4717
ANALOG SWITCH APPLICATION CHARACTERISTICS
-40
°C
to +85°C
Symbol
Q
Parameter
Charge Injection
Condition
V
IN
= V
CC
to GND
R
In
= 0
W,
C
L
= 1.0 nF
Q = C
L
-
DV
OUT
VISO
Off-Isolation
f = 10 MHz
V
NO
_, V
NC
_ = 1.0 Vp-p
R
L
= 50
W,
C
L
= 5.0 pF
f = 1.0 MHz
V
NO
_, V
NC
_ = 1.0 Vp-p
R
L
= 50
W,
C
L
= 5.0 pF
VCT
Cross-T alk
f = 10 MHz
V
NO
_, V
NC
_ = 1.0 Vp-p
R
L
= 50
W,
C
L
= 5.0 pF
f = 1.0 MHz
V
NO
_, V
NC
_ = 1.0 Vp-p
R
L
= 50
W,
C
L
= 5.0 pF
BW
On-Channel
-3.0 db Bandwidth
Total Harmonic Distortion
NO_, NC_
OFF-Capacitance
NO_, NC_
ON-Capacitance
Signal = 0 dB
R
L
= 50
W,
C
L
= 5.0 pF
V
COM
= 2.0 Vp-p,
RL = 600
W,
T
A
= 25°C
F = 10 MHz
F = 10 MHz
-
-
-
0.02
30
110
%
pF
pF
1.8 to 5.0
40
MHz
-1 10
1.65 to 5.5
-80
dB
-75
1.65 to 5.5
-50
dB
V
CC
(V)
3.0
5.0
Min
Typ
6.0
9.0
Max
Unit
pC
THD
C
NO_[OFF]
C
NC_[OFF]
C
NO_[ON]
C
NC_[ON]
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4
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