INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 200V(Min)- BUV28F
225V(Min)- BUV28AF
·High
Switching Speed
APPLICATIONS
·Designed
for fast switching applications such as high
frequency and efficiency converters, switching regulators
and motor control.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BUV28F
BUV28AF
BUV28F
V
CEO
Collector-Emitter Voltage
BUV28AF
V
EBO
I
C
I
CM
I
B
B
BUV28F/AF
VALUE
400
UNIT
V
CES
Collector-Emitter Voltage
V
BE
= 0
V
450
200
V
225
5
12
20
2
4
18
150
-65~150
V
A
A
A
A
W
℃
℃
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
7.0
55
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUV28F
I
C
= 0.2A ;I
B
= 0; L= 25mH
B
BUV28F/AF
CONDITIONS
MIN
200
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
225
BUV28AF
BUV28F
BUV28AF
BUV28F
BUV28AF
I
CEX
I
CES
I
EBO
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 6A; I
B
= 0.6A
B
V
CE(sat)
Collector-Emitter
Saturation Voltage
1.5
V
1.5
2.0
V
2.0
1.0
3.0
1.0
mA
mA
mA
I
C
= 4A; I
B
= 0.4A
B
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 6A; I
B
= 0.6A
B
I
C
= 4A; I
B
= 0.4A
B
V
CE
=V
CESmax
;V
BE
=-1.5V,T
J
=125℃
V
CE
=V
CESmax
;V
BE
=0,T
J
=125℃
V
EB
= 5V; I
C
=0
Switching Times; Resistive Load
t
on
t
stg
t
f
Turn-On Time
Storage Time
Fall Time
For BUV28AF
I
C
= 4A; I
B1
= 0.4A; I
B2
= -0.8A
0.3
0.5
0.1
1.0
1.5
0.25
μs
μs
μs
For BUV28F
I
C
= 6A; I
B1
= 0.6A; I
B2
= -1.2A
isc Website：www.iscsemi.cn
2
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